参数资料
型号: MBRB10H100-E3/31
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB
封装: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件页数: 1/5页
文件大小: 132K
代理商: MBRB10H100-E3/31
Vishay General Semiconductor
MBR(F,B)10H90 & MBR(F,B)10H100
New Product
Document Number 88667
28-Jun-06
www.vishay.com
1
High-Voltage Schottky Rectifier
High Barrier Technology for improved high temperature performance
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
Solder Dip 260 °C, 40 seconds (for TO-220AC &
ITO-220AC package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
supplies,
freewheeling
diodes,
dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
10 A
VRRM
90 V, 100 V
IFSM
250 A
VF
0.64 V
IR
4.5 A
Tj max
175 °C
PIN 2
PIN 1
TO-263AB
1
2
CASE
PIN 2
PIN 1
TO-220AC
MBR10H90
MBR10H100
ITO-220AC
MBRF10H90
MBRF10H100
MBRB10H90
MBRB10H100
PIN 1
K
PIN 2
HEATSINK
1
2
1
2
K
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR10H90
MBR10H100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current
IF(AV)
10
A
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
IFSM
250
A
Peak repetitive reverse current at tp = 2 s, 1 kHz
IRRM
0.5
A
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
Isolation voltage (ITO-220AC only)
From terminal to heatsink t = 1 minute
VAC
1500
V
相关PDF资料
PDF描述
MBRB2060CTT4 10 A, 60 V, SILICON, RECTIFIER DIODE
MBRB20H45CT-E3/31 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB25H45CT-E3/31 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB30H60CT-E3/31 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB4045CTPBF 20 A, 45 V, SILICON, RECTIFIER DIODE
相关代理商/技术参数
参数描述
MBRB10H100HE3/45 功能描述:肖特基二极管与整流器 100 Volt 10A Single 250 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRB10H100-HE3/45 制造商:Vishay Intertechnologies 功能描述:Diode Schottky 100V 10A 3-Pin(2+Tab) TO-263AB Tube
MBRB10H100HE3/81 功能描述:肖特基二极管与整流器 100 Volt 10A Single 250 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRB10H150CT-1 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual High-Voltage Schottky Rectifiers
MBRB10H150CT-1/45 功能描述:肖特基二极管与整流器 150 Volt 10A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel