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参数资料
| 型号： | MBRB20H45CT-E3/31 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 153K |
| 代理商： | MBRB20H45CT-E3/31 |
Vishay General Semiconductor
MBR(F,B)20H35CT thru MBR(F,B)20H60CT
New Product
Document Number 88787
22-Aug-06
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
High Barrier Technology for improved high temperature performance
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
Solder Dip 260 °C, 40 seconds (for TO-220AB &
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, free-wheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
10 A x 2
VRRM
35 V to 60 V
IFSM
150 A
VF
0.55 V, 0.61 V
IR
100 A
Tj max
175 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR20HxxCT
ITO-220AB
MBRB20HxxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
MBRF20HxxCT
PIN 2
PIN 1
PIN 3
TO-263AB
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR20H35CT
MBR20H45CT
MBR20H50CT MBR20H60CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Max. average forward rectified
current (see Fig. 1)
Total device
per diode
IF(AV)
20
10
A
Non-repetitive avalanche energy per diode at 25
°C, IAS = 4 A, L = 10 mH
EAS
80
mJ
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
150
A
Peak repetitive reverse surge current per diode at
tp = 2.0 s, 1 kHz
IRRM
1.0
0.5
A
Peak non-repetitive reverse energy
(8/20 s waveform)
ERSM
20
10
mJ
相关PDF资料 |
PDF描述 |
|---|---|
| MBRB25H45CT-E3/31 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB30H60CT-E3/31 | 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB4045CTPBF | 20 A, 45 V, SILICON, RECTIFIER DIODE |
| MBRF10100 | 10 A, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRF10150-G | 10 A, SILICON, RECTIFIER DIODE, TO-220AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRB20H45CTHE3/45 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| MBRB20H45CTHE3/81 | 功能描述:肖特基二极管与整流器 45 Volt 20A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB20H50CT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| MBRB20H60CT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier |
| MBRB20H60CT-E3/81 | 功能描述:肖特基二极管与整流器 60 Volt 20A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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