参数资料
型号: MBRB20H45CT-E3/31
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB
封装: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件页数: 4/5页
文件大小: 153K
代理商: MBRB20H45CT-E3/31
www.vishay.com
4
Document Number 88787
22-Aug-06
Vishay General Semiconductor
MBR(F,B)20H35CT thru MBR(F,B)20H60CT
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
1
3
PIN
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.160 (4.06)
0.140 (3.56)
0.635 (16.13)
0.625 (15.87)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
0.057 (1.45)
0.045 (1.14)
2
1.148 (29.16)
1.118 (28.40)
0.404 (10.26)
0.384 (9.75)
See note
0.076 Ref.
(1.93) ref.
45° Ref.
0.600 (15.24)
0.580 (14.73)
PIN
12
0.560 (14.22)
0.530 (13.46)
0.025 (0.64)
0.015 (0.38)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.671 (17.04)
0.651 (16.54)
0.076Ref.
(1.93)Ref.
See note
7° Ref.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
7° Ref.
0.350 (8.89)
0.330 (8.38)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° Ref.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
ITO-220AB
Note: Copper exposure is allowablefor 0.005 (0.13) Max. from the body
3
0.080 (2.03)
0.065 (1.65)
0.105 (2.67)
0.095 (2.41)
0.380 (9.65)
0.41
1 (10.45)
0.320 (8.13)
0.360 (9.14)
0.591(15.00)
0.624 (15.85)
1
2
0.245 (6.22)
MIN
K
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.014 (0.36)
0.021 (0.53)
0.110 (2.79)
0.140 (3.56)
0.110 (2.79)
0.090 (2.29)
0.047 (1.19)
0.055 (1.40)
0-0.01 (0-0.254)
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
TO-263AB
0.105 (2.67)
0.08
(0.095) (2.41)
(2.032)
0.42
(10.66)
0.670 (17.02)
0.591 (15.00)
0.15
(3.81)
0.33
(8.38)
Mounting Pad Layout
MIN.
相关PDF资料
PDF描述
MBRB25H45CT-E3/31 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB30H60CT-E3/31 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB4045CTPBF 20 A, 45 V, SILICON, RECTIFIER DIODE
MBRF10100 10 A, SILICON, RECTIFIER DIODE, TO-220AC
MBRF10150-G 10 A, SILICON, RECTIFIER DIODE, TO-220AC
相关代理商/技术参数
参数描述
MBRB20H45CTHE3/45 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier
MBRB20H45CTHE3/81 功能描述:肖特基二极管与整流器 45 Volt 20A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRB20H50CT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier
MBRB20H60CT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier
MBRB20H60CT-E3/81 功能描述:肖特基二极管与整流器 60 Volt 20A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel