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参数资料
型号： MBRB10H100CT-E3/31
厂商： VISHAY SEMICONDUCTORS
元件分类： 整流器
英文描述： 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB
封装： ROHS COMPLIANT, PLASTIC PACKAGE-3
文件页数： 1/5页
文件大小： 149K
代理商： MBRB10H100CT-E3/31
Vishay General Semiconductor
MBR(F,B)10H90CT & MBR(F,B)10H100CT
Document Number 88668
22-Aug-06
www.vishay.com
1
Dual Common-Cathode High-Voltage Schottky Rectifier
High Barrier Technology for improved high temperature performance
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
Solder Dip 260 °C, 40 seconds (for TO-220AB &
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
supplies,
free-wheeling
diodes,
dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
5 A x 2
VRRM
90 V, 100 V
IFSM
150 A
VF
0.61 V
IR
3.5 A
Tj max
175 °C
TO-263AB
1
2
3
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR10H90CT
MBR10H100CT
ITO-220AB
MBRF10H90CT
MBRF10H100CT
MBRB10H90CT
MBRB10H100CT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
PIN 2
PIN 1
PIN 3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR10H90CT
MBR10H100CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TC = 105 °C
Total device
per diode
IF(AV)
10
5.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
A
Peak repetitive reverse current per diode at tp = 2 s, 1 kHz
IRRM
0.5
A
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
Isolation voltage (ITO-220AB only)
From terminals to heatsink t = 1 minute
VAC
1500
V
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相关代理商/技术参数
参数描述
MBRB10H100CT-HE3/31 制造商:Vishay Angstrohm 功能描述:Diode Schottky 100V 10A 3-Pin(2+Tab) TO-263AB T/R
MBRB10H100CTHE3/45 功能描述:肖特基二极管与整流器 100 Volt 10A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRB10H100CTHE3/81 功能描述:肖特基二极管与整流器 100 Volt 10A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRB10H100-E3/31 功能描述:肖特基二极管与整流器 100 Volt 10A Single 250 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRB10H100-E3/45 功能描述:肖特基二极管与整流器 100 Volt 10A Single 250 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
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