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参数资料
| 型号： | MBRP40030CTLG |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 整流器 |
| 英文描述： | 200 A, 30 V, SILICON, RECTIFIER DIODE |
| 封装： | LEAD FREE, PLASTIC, CASE 357C-03, POWERTAP II, 2 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 154K |
| 代理商： | MBRP40030CTLG |
Semiconductor Components Industries, LLC, 2006
September, 2006 Rev. 4
1
Publication Order Number:
MBRP40030CTL/D
MBRP40030CTL
Preferred Device
POWERTAPt II
SWITCHMODEt Power
Rectifier
This state-of-the-art SWITCHMODE Power Rectifier uses the
Schottky Barrier principle with a platinum barrier metal.
Features
Dual Diode Construction; May Be Paralleled for Higher Current Output
GuardRing for Stress Protection
Low Forward Voltage Drop
150°C Operating Junction Temperature
Recyclable Epoxy
Improved Mechanical Ratings
PbFree Package is Available*
Mechanical Characteristics
Case: Epoxy, Molded with metal heatsink base
Weight: 80 grams (Approximately)
Finish: All External Surfaces Corrosion Resistant
Top Terminal Torque: 2540 lbin Max
Base Plate Torques: See procedure Given in the Package Outline Section
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
V
Average Rectified Forward Current
(At Rated VR, TC = 100°C) Per Leg
Per Device
IF(AV)
200
400
A
Peak Repetitive Forward Current,
(At Rated VR, Square Wave,
20 kHz, TC = 100°C)
IFRM
200
A
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
IFSM
1500
A
Peak Repetitive Reverse Surge
Current (2.0 ms, 1.0 kHz)
IRRM
2.0
A
Storage Temperature Range
Tstg
55 to +150
°C
Operating Junction Temperature
TJ
55 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
POWERTAP II
CASE 357C
PLASTIC
1
2
3
1
2
3
Device
Package
Shipping
ORDERING INFORMATION
MBRP40030CTL
POWERTAP II 25 Units/Tray
MARKING DIAGRAM
B40030L
= Specific Device Code
MCC
= Mold Compound Code
A
= Assembly Location
YY
= Year
WW
= Work Week
G= PbFree Package
MCC
AYYWWG
POWERTAP II
(PbFree)
MBRP40030CTLG
25 Units/Tray
LOW VF SCHOTTKY
BARRIER RECTIFIER
400 AMPERES, 30 VOLTS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRP40045CTL | 功能描述:肖特基二极管与整流器 400A 45V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRP40045CTLG | 功能描述:肖特基二极管与整流器 400A 45V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRP60035CTL | 功能描述:肖特基二极管与整流器 600A 35V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRP60035CTLG | 功能描述:肖特基二极管与整流器 600A 35V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRP745 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:SCHOTTKY BARRIER RECTIFIER |
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