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参数资料
| 型号： | MBRB10H100HE3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 128K |
| 代理商： | MBRB10H100HE3/45 |
MBR(F,B)10H90 & MBR(F,B)10H100
Vishay General Semiconductor
Document Number: 88667
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AC and
ITO-220AC package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
supplies,
freewheeling
diodes,
dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
90 V, 100 V
IFSM
250 A
VF
0.64 V
IR
4.5 A
TJ max.
175 °C
PIN 2
PIN 1
TO-263AB
CASE
PIN 2
PIN 1
TO-220AC
MBR10H90
MBR10H100
ITO-220AC
MBRF10H90
MBRF10H100
MBRB10H90
MBRB10H100
PIN 1
K
PIN 2
HEATSINK
1
2
1
2
K
1
2
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR10H90
MBR10H100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current
IF(AV)
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
250
A
Peak repetitive reverse current at tp = 2 s, 1 kHz
IRRM
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min
VAC
1500
V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRB10H150CT-1 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual High-Voltage Schottky Rectifiers |
| MBRB10H150CT-1/45 | 功能描述:肖特基二极管与整流器 150 Volt 10A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB10H35 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Barrier Rectifiers |
| MBRB10H35-E3/81 | 制造商:Vishay Semiconductors 功能描述:10A,35V,SINGLE SCHOTTKY RECT. |
| MBRB10H35HE3/81 | 制造商:Vishay Semiconductors 功能描述:10A,35V,SINGLE SCHOTTKY RECT. |
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