- 您现在的位置：买卖IC网 > PDF目录81269 > MBRB10H100HE3/45 (VISHAY SEMICONDUCTORS) 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB PDF资料下载
参数资料
| 型号： | MBRB10H100HE3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 128K |
| 代理商： | MBRB10H100HE3/45 |
MBR(F,B)10H90 & MBR(F,B)10H100
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88667
Revision: 07-May-08
2
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Maximum instantaneous forward voltage (1)
IF = 10 A
IF = 20 A
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
VF
0.77
0.64
0.88
0.73
V
Maximum reverse current at working peak reverse voltage (1)
TJ = 25 °C
TJ = 125 °C
IR
4.5
6.0
A
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
Typical thermal resistance
RθJC
2.7
5.8
2.7
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AC
MBR10H100-E3/45
1.80
45
50/tube
Tube
ITO-220AC
MBRF10H100-E3/45
1.94
45
50/tube
Tube
TO-263AB
MBRB10H100-E3/45
1.33
45
50/tube
Tube
TO-263AB
MBRB10H100-E3/81
1.33
81
800/reel
Tape and reel
TO-220AC
MBR10H100HE3/45 (1)
1.80
45
50/tube
Tube
ITO-220AC
MBRF10H100HE3/45 (1)
1.94
45
50/tube
Tube
TO-263AB
MBRB10H100HE3/45 (1)
1.33
45
50/tube
Tube
TO-263AB
MBRB10H100HE3/81 (1)
1.33
81
800/reel
Tape and reel
Figure 1. Forward Current Derating Curve
0
4
8
12
20
0
50
100
150
16
180
MBRF
MBR
MBRB
Resistive or Inductive Load
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
0
50
150
100
250
200
300
1
100
10
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
相关PDF资料 |
PDF描述 |
|---|---|
| MM3Z56VCW | 56 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMSZ43VCW | 43 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMSZ7V5CW | 7.5 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMSZ5231C | 5.1 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MART65KP48AE3 | 65000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRB10H150CT-1 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual High-Voltage Schottky Rectifiers |
| MBRB10H150CT-1/45 | 功能描述:肖特基二极管与整流器 150 Volt 10A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB10H35 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Barrier Rectifiers |
| MBRB10H35-E3/81 | 制造商:Vishay Semiconductors 功能描述:10A,35V,SINGLE SCHOTTKY RECT. |
| MBRB10H35HE3/81 | 制造商:Vishay Semiconductors 功能描述:10A,35V,SINGLE SCHOTTKY RECT. |
发布紧急采购，3分钟左右您将得到回复。