参数资料
型号: MBRB10H45
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB
封装: PLASTIC PACKAGE-3
文件页数: 3/3页
文件大小: 72K
代理商: MBRB10H45
MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88780
www.vishay.com
03-Mar-03
3
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
1
10
100
25
50
75
100
125
150
175
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 5 – Typical Junction
Capacitance
Fig. 6 – Typical Transient
Thermal Impedance
Number of Cycles at 60 HZ
Reverse Voltage (V)
P
eak
F
orw
ard
Surge
Current
(A)
0
5
10
15
025
50
75
100
125
150
175
Fig. 1 – Forward Current
Derating Curve
A
v
er
age
F
orw
ard
Current
(A)
Case Temperature (
°C)
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
0.01
0.1
0.1 0.2 0.3
0.4 0.5
0.6
0.7 0.8 0.9
1.0
1.1
0
1.0
10
100
Instantaneous Forward Voltage (V)
Instantaneous
F
orw
ard
Current
(A)
020
60
40
100
80
0.0001
0.001
0.1
0.01
1
10
100
Fig. 4 – Typical Reverse
Characteristics
Instantaneous
Re
v
erse
Leakage
Current
(mA)
Percent of Rated Peak Reverse Voltage (%)
t, Pulse Duration (sec.)
T
ranseint
Ther
mal
Impedance
(
°C/W)
pF
-
J
unction
Capacitance
0.01
10
1
0.1
1
10
110
0
100
1000
10000
100
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
MBR10H35 -- MBR10H45
MBR10H50 -- MBR10H60
MBR10H35 -- MBR10H45
MBR10H50 -- MBR10H60
TJ = 25
°C
f = 1.0 MHZ
Vsig = 50mVp-p
TJ = 150
°C
TJ = 150
°C
TJ = 125
°C
TJ = 25
°C
TJ = 125
°C
TJ = 25
°C
MBR10H35 -- MBR10H45
MBR10H50 -- MBR10H60
MBRF
MBR, MBRB
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