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参数资料
| 型号： | MBRB1100CT |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, D2PACK-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 83K |
| 代理商： | MBRB1100CT |
SENSITRON
SEMICONDUCTOR
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MBR1080/90/100CT
MBRB1080/90/100CT
MBR1080/90/100CT-1
Data Sheet 2942, Rev. C
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
80
MBR1080CT
MBRB1080CT
MBR1080CT-1
90
MBR1090CT
MBRB1090CT
MBR1090CT-1
Peak Inverse Voltage
VRWM
-
100
MBR10100CT
MBRB10100CT
MBR10100CT-1
V
5(Per leg)
Max. Average Forward
IF(AV)
50% duty cycle @TC
=100°C, rectangular wave
form
10(Per device)
A
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
120
A
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
(per leg) *
VF1
@ 5A, Pulse, TJ = 25
°C
@ 10 A, Pulse, TJ = 25 °C
0.85
0.95
V
VF2
@ 5 A, Pulse, TJ = 125 °C
@ 10 A, Pulse, TJ = 125 °C
0.75
0.85
V
Max. Reverse Current (per
leg) *
IR1
@VR = rated VR
TJ = 25 °C
1.00
mA
IR2
@VR = rated VR
TJ = 125
°C
15
mA
Max. Junction Capacitance
(per leg)
CT
@VR = 5V, TC = 25
°C
fSIG = 1MHz
300
pF
Typical Series Inductance
(per leg)
LS
Measured lead to lead 5 mm from
package body
8.0
nH
Max. Voltage Rate of Change
dv/dt
-
10,000
V/
s
* Pulse Width < 300s, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Symbol
Condition
Specification
Units
Max. Junction Temperature
TJ
-
-55 to +150
°C
Max. Storage Temperature
Tstg
-
-55 to +150
°C
Maximum Thermal
Resistance Junction to Case
(per leg)
RθJC
DC operation
2.0
°C/W
Maximum Thermal
Resistance, Case to Heat
Sink
RθCS
Mounting surface,
smooth and greased
(only for TO-220)
0.50
°C/W
Approximate Weight
wt
-
2
g
Mounting Torque
TM
-
6(Min.)
12(Max.)
Kg-cm
Case Style
TO-220AB D
2PAK TO-262
相关PDF资料 |
PDF描述 |
|---|---|
| MBR1080CT | 5 A, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR12035 | 120 A, 35 V, SILICON, RECTIFIER DIODE |
| MBR12045 | 120 A, 45 V, SILICON, RECTIFIER DIODE |
| MBR12040 | 120 A, 40 V, SILICON, RECTIFIER DIODE |
| MBR12040CT | 60 A, 40 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRB15100CT | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:15 Amp Schottky Barrier Rectifier 20 to 100 Volts |
| MBRB1520CT | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:15 Amp Schottky Barrier Rectifier 20 to 100 Volts |
| MBRB1520CT_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:15 Amp Schottky Barrier Rectifier 20 to 100 Volts |
| MBRB1530CT | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:15A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| MBRB1530CT_ | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:15A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
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