参数资料
型号: MBRB1560CT-HE3/45
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB
封装: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件页数: 1/5页
文件大小: 492K
代理商: MBRB1560CT-HE3/45
MBR(F,B)1535CT thru MBR(F,B)1560CT
Vishay General Semiconductor
Document Number: 88670
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
supplies,
freewheeling
diodes,
dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
7.5 A x 2
VRRM
35 V to 60 V
IFSM
150 A
VF
0.57 V, 0.65 V
TJ max.
150 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR15xxCT
ITO-220AB
MBRB15xxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
MBRF15xxCT
PIN 2
PIN 1
PIN 3
TO-263AB
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR1535CT MBR1545CT MBR1550CT MBR1560CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Maximum average forward rectified
current at TC = 105 °C
total device
per diode
IF(AV)
15
7.5
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
A
Peak repetitive reverse surge current per diode at
tp = 2.0 s, 1 kHz
IRRM
1.0
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction temperature range
TJ
- 65 to + 150
°C
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