参数资料
型号: MBRB20100CT-E3/4W
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB
封装: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件页数: 1/5页
文件大小: 149K
代理商: MBRB20100CT-E3/4W
MBR(F,B)2090CT & MBR(F,B)20100CT
Vishay General Semiconductor
Document Number: 89033
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
Dual Common-Cathode High-Voltage Schottky Rectifier
FEATURES
Trench MOS Schottky technology
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB and ITO-220AB
package)
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
90 V, 100 V
IFSM
150 A
VF
0.65 V
TJ max.
150 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR2090CT
MBR20100CT
MBRB2090CT
MBRB20100CT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
PIN 2
PIN 1
PIN 3
MBRF2090CT
MBRF20100CT
ITO-220AB
TMBS
TO-263AB
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR2090CT
MBR20100CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TC = 133 °C
total device
per diode
IF(AV)
20
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
A
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
EAS
130
mJ
Peak repetitive reverse current at tp = 2 s, 1 kHz,
TJ = 38 °C ± 2 °C per diode
IRRM
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 min
VAC
1500
V
相关PDF资料
PDF描述
MBRB30H90CTHE3/45 15 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRF30H90CTHE3/45 15 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB
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