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参数资料
| 型号： | MBRB30H90CTHE3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 15 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 144K |
| 代理商： | MBRB30H90CTHE3/45 |
New Product
MBR(F,B)30H90CT & MBR(F,B)30H100CT
Vishay General Semiconductor
Document Number: 88791
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
15 A x 2
VRRM
90 V, 100 V
IFSM
275 A
VF
0.67 V
IR
5.0 A
TJ max.
175 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR30H90CT
MBR30H100CT
ITO-220AB
MBRB30H90CT
MBRB30H100CT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
MBRF30H90CT
MBRF30H100CT
PIN 2
PIN 1
PIN 3
TO-263AB
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR30H90CT
MBR30H100CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current (Fig. 1)
total device
per diode
IF(AV)
30
15
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
275
A
Peak repetitive reverse current per diode at tp = 2 s, 1 kHz
IRRM
1.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
VAC
1500
V
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