参数资料
型号: MBRB3030CTG
厂商: ON Semiconductor
文件页数: 1/6页
文件大小: 55K
描述: DIODE SCHOTTKY 30V 15A D2PAK
标准包装: 50
系列: SWITCHMODE™
电压 - 在 If 时为正向 (Vf)(最大): 540mV @ 15A
电流 - 在 Vr 时反向漏电: 600µA @ 30V
电流 - 平均整流 (Io)(每个二极管): 15A
电压 - (Vr)(最大): 30V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 管件
?
Semiconductor Components Industries, LLC, 2006
February, 2006 ? Rev. 6
1
Publication Order Number:
MBRB3030CT/D
MBRB3030CT
Preferred Device
SWITCHMODE
Power Rectifier
These state?of?the?art devices use the Schottky Barrier principle
with a proprietary barrier metal.
Features
?Guardring for Stress Protection
?Maximum Die Size
?175°C Operating Junction Temperature
?Short Heat Sink Tab Manufactured ? Not Sheared
?Pb?Free Packages are Available
Mechanical Characteristics:
?Case: Epoxy, Molded, Epoxy Meets UL 94 V?0
?Weight: 1.7 Grams (Approximately)
?Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
?Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
?Device Meets MSL1 Requirements
?ESD Ratings: Machine Model, C (>400 V)
Human Body Model, 3B (>8000 V)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
V
Average Rectified Forward Current
(At Rated VR, TC
= 134
°C) Per Device
Per Leg
IF(AV)
30
15
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave,
20 kHz, TC
= +137
°C) Per Leg
IFRM
30
A
Non?Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions,
Halfwave, Single Phase, 60 Hz)
IFSM
200
A
Peak Repetitive Reverse Surge Current
(2.0 s, 1.0 kHz)
IRRM
2.0
A
Storage Temperature Range
Tstg
?55 to +175
°C
Operating Junction Temperature (Note 1)
TJ
?55 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/s
Reverse Energy
(Unclamped Inductive Surge)
(Inductance = 3 mH, TC
= 25
°C)
W
100
mJ
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction?to?Ambient: dP
D/dTJ
< 1/R
JA.
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES, 30 VOLTS
1
3
4
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
D2PAK
CASE 418B
STYLE 3
3
4
1
MARKING DIAGRAM
B3030CTG
AKA
A = Assembly Location
Y = Year
WW = Work Week
B3030CT = Device Code
G = Pb?Free Package
AKA = Diode Polarity
AY WW
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