参数资料
型号: MBRB3030CTG
厂商: ON Semiconductor
文件页数: 4/6页
文件大小: 55K
描述: DIODE SCHOTTKY 30V 15A D2PAK
标准包装: 50
系列: SWITCHMODE™
电压 - 在 If 时为正向 (Vf)(最大): 540mV @ 15A
电流 - 在 Vr 时反向漏电: 600µA @ 30V
电流 - 平均整流 (Io)(每个二极管): 15A
电压 - (Vr)(最大): 30V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 管件
MBRB3030CT
http://onsemi.com
4
TYPICAL CHARACTERISTICS
IF(AV), AVERAGE FORWARD CURRENT (A)
15
10
5
005
15
P
F(AV)
, AVERAGE FORWARD POWER DISSIPATION (W)
20 25
DC
10
10
20
TJ
= 150
°C
π
(RESISTIVE LOAD)
SQUARE WAVE
TA, AMBIENT TEMPERATURE (°C)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
10
0050
150
100
SQUARE WAVE
π
(RESISTIVE LOAD)
10
20
DC
RJA
= 50
°C/W
TA, AMBIENT TEMPERATURE (°C)
5
0
0
50
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
100
DC
10
20
SQUARE WAVE
150
RJA
= 25
°C/W
IPK
I
= 5.0
(CAPACITIVE
AV
LOAD)
TC, CASE TEMPERATURE (°C)
30
20
10
0
120
125 150140
145
130
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
135
10
20
DC
IPK
= 5.0(CAPACITIVE
IAV
LOAD)
Figure 6. Current Derating, Infinite Heatsink
Figure 7. Current Derating
Figure 8. Current Derating, Free Air
Figure 9. Forward Power Dissipation
4
2
155
15
10
π
(RESISTIVE LOAD)
SQUARE WAVE
π
(RESISTIVE LOAD)
RJC
= 1
°C/W
8
6
IPK
I
= 5.0
(CAPACITIVE
AV
LOAD)
IPK
I
= 5.0
(CAPACITIVE
AV
LOAD)
Figure 10. Thermal Response
t, TIME (ms)
1.0
0.1
0.01
1.0 1000100
0.1
R(t), EFFECTIVE TRANSIENT THERMAL
10
SINGLE PULSE
RESISTANCE (NORMALIZED)
Ppk
Ppk
tp
t?
R
1
JL
[D + (1 - D)
?
r(t
1
+ t
p) + r(tp) - r(t1)]
TIME
equivalent square power pulse.
DUTY CYCLE, D = tp/t1
PEAK POWER, Ppk, is peak of an
TJL
= P
where
pk
TJL
= the increase in junction temperature above the lead temperature
r(t) = normalized value of transient thermal resistance at time, t, for example,
r(t) = r(t1
+ t
p) = normalized value of transient thermal resistance at time, t1
+ t
p.
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