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参数资料
| 型号： | MBRB30H60CT-E3/31 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 153K |
| 代理商： | MBRB30H60CT-E3/31 |
www.vishay.com
2
Document Number 88866
22-Aug-06
Vishay General Semiconductor
MBR(F,B)30H35CT thru MBR(F,B)30H60CT
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Electrostatic discharge capacitor voltage Human
body model: C = 100 pF, R = 1.5 k
Ω
VC
25
kV
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction temperature range
TJ
- 65 to + 175
°C
Storage temperature range
TSTG
- 65 to + 175
°C
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 minute
VAC
1500
V
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBR30H35CT
MBR30H45CT
MBR30H50CT
MBR30H60CT
UNIT
TYP
MAX
TYP
MAX
Maximum instantaneous forward
voltage per diode (1)
at IF = 15 A
at IF = 30 A
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VF
-
0.49
-
0.62
0.56
0.73
0.67
-
0.55
-
0.68
0.59
0.83
0.71
V
Maximum instantaneous reverse
current at rated DC blocking
voltage per diode (1)
Tj = 25 °C
Tj = 125 °C
IR
-
5.0
80
15
-
4.0
60
15
A
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
Thermal resistance from junction to case per diode
RθJC
1.5
4.5
1.5
°C/W
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR30H35CT
MBR30H45CT
MBR30H50CT MBR30H60CT
UNIT
ORDERING INFORMATION
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR30H45CT-E3/45
1.85
45
50/Tube
Tube
ITO-220AB
MBRF30H45CT-E3/45
1.99
45
50/Tube
Tube
TO-263AB
MBRB30H45CT-E3/45
1.35
45
50/Tube
Tube
TO-263AB
MBRB30H45CT-E3/81
1.35
81
800/Reel
Tape Reel
相关PDF资料 |
PDF描述 |
|---|---|
| MBRB4045CTPBF | 20 A, 45 V, SILICON, RECTIFIER DIODE |
| MBRF10100 | 10 A, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRF10150-G | 10 A, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRF1045CT | 10 A, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF10H150CT | 5 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRB30H60CTHE3/81 | 功能描述:肖特基二极管与整流器 60 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB30H60CTT4G | 功能描述:肖特基二极管与整流器 30A/60V H-SERIES D2PAK RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB30H80CT-1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SWITCHMODE? Power Rectifier 80 V, 30 A |
| MBRB30H80CT-1G | 功能描述:肖特基二极管与整流器 30A 80V H-SERIES I2PAK RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB30H90CT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier |
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