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参数资料
| 型号： | MBRB30H60CT-E3/31 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 3/5页 |
| 文件大小： | 153K |
| 代理商： | MBRB30H60CT-E3/31 |
Document Number 88866
22-Aug-06
www.vishay.com
3
MBR(F,B)30H35CT thru MBR(F,B)30H60CT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Forward Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
0
10
20
30
40
50
25
0
75
100
125
150
175
MBRF
MBR, MBRB
A
v
er
age
F
o
rw
ard
C
u
rrent
(
A)
Case Temperature (°C)
1
100
0
25
50
75
100
125
150
10
Tj = Tj max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
0.01
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
10
100
MBR30H35CT -- MBR30H45CT
MBR30H50CT -- MBR30H60CT
Tj = 150 °C
Tj = 125 °C
Tj = 25 °C
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
60
40
20
0
100
80
0.0001
0.001
0.1
0.01
1
10
100
MBR30H35CT -- MBR30H45CT
MBR30H50CT -- MBR30H60CT
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
Leakage
C
u
rrent
(mA)
Tj = 150 °C
Tj = 125 °C
Tj = 25 °C
0.1
1
100
10
1000
100
10000
MBR30H35CT -- MBR30H45CT
MBR30H50CT -- MBR30H60CT
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
Tj = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.01
0.1
1
10
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
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