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参数资料
| 型号： | MBRB41H100CT-1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/9页 |
| 文件大小： | 124K |
| 描述： | DIODE SCHOTTKY 100V 20A H I2PAK |
| 标准包装： | 50 |
| 系列： | SWITCHMODE™ |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 800mV @ 20A |
| 电流 - 在 Vr 时反向漏电： | 10µA @ 100V |
| 电流 - 平均整流 (Io)（每个二极管）： | 20A |
| 电压 - (Vr)（最大）： | 100V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | I2PAK（TO-262） |
| 包装： | 管件 |
MBR41H100CT, NRVBB41H100CT Series
http://onsemi.com
5
MERCURY
SWITCH
VD
ID
DUT
10 mH COIL
+VDD
IL
S1
BVDUT
IL
ID
VDD
t0
t1
t2
t
Figure 10. Test Circuit
Figure 11. Current?Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 10 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1
is closed at t
0
the current in the inductor I
L
ramps
up linearly; and energy is stored in the coil. At t1
the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT
and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD
power supply while the diode is in
breakdown (from t1
to t
2) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD
voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1
was closed,
Equation (2).
BV
WAVAL
1
2LI
2
LPK
DUT
BVDUTV
DD
WAVAL
1
2LI
2
LPK
EQUATION (1):
EQUATION (2):
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| MBRB60100CTTR | 功能描述:DIODE ARRAY SCHOTTKY 100V D2PAK 制造商:smc diode solutions 系列:- 包装:剪切带（CT） 零件状态:有效 二极管配置:1 对共阴极 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:100V 电流 - 平均整流（Io）（每二极管）:- 不同 If 时的电压 - 正向（Vf）:900mV @ 30A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:1mA @ 100V 安装类型:表面贴装 封装/外壳:TO-263-3，D2Pak（2 引线+接片），TO-263AB 供应商器件封装:D2PAK 标准包装:1 |
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| MBRB60H100CTT4G | 制造商:ON Semiconductor 功能描述:SCHOTTKY RECTIFIER 30A 100V D2PAK 制造商:ON Semiconductor 功能描述:SCHOTTKY RECTIFIER, 30A, 100V D2PAK |
| MBRB735 | 功能描述:肖特基二极管与整流器 7.5 Amp 35 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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