参数资料
型号: MBRD320TRPBF
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 整流器
英文描述: 3 A, 20 V, SILICON, RECTIFIER DIODE, TO-252AA
封装: ROHS COMPLIANT, D-PAK-3
文件页数: 2/6页
文件大小: 79K
代理商: MBRD320TRPBF
www.vishay.com
For technical questions, contact: diodestech@vishay,com
Document Number: 94313
2
Revision: 08-Jul-09
MBRD3..PbF Series
Vishay High Power Products Schottky Rectifier, 3.0 A
Note
(1) Pulse width < 300 s, duty cycle < 2 %
Note
(1)
thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TYP.
MAX.
UNITS
Maximum forward voltage drop
See fig. 1
VFM (1)
3 A
TJ = 25 °C
0.48
0.6
V
6 A
0.58
0.7
3 A
TJ = 125 °C
0.41
0.49
6 A
0.55
0.625
Maximum reverse leakage current
See fig. 2
IRM (1)
TJ = 25 °C
VR = Rated VR
0.02
0.2
mA
TJ = 125 °C
10.7
20
Typical junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
189
-
pF
Typical series inductance
LS
Measured lead to lead 5 mm from package body
5.0
-
nH
Maximum voltage rate of change
dV/dt
Rated VR
-
10 000
V/s
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction temperature range
TJ (1)
- 40 to 150
°C
Maximum storage temperature range
TStg
- 40 to 175
Maximum thermal resistance,
junction to case
RthJC
DC operation
See fig. 4
6.0
°C/W
Maximum thermal resistance,
junction to ambient
RthJA
80
Approximate weight
0.3
g
0.01
oz.
Marking device
Case style D-PAK (similar to TO-252AA)
MBRD320
MBRD330
MBRD340
dP
tot
dT
J
-------------
1
R
thJA
--------------
<
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