参数资料
型号: MBRD330TRPBF
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 整流器
英文描述: 3 A, 30 V, SILICON, RECTIFIER DIODE, TO-252AA
封装: ROHS COMPLIANT, D-PAK-3
文件页数: 4/6页
文件大小: 79K
代理商: MBRD330TRPBF
www.vishay.com
For technical questions, contact: diodestech@vishay,com
Document Number: 94313
4
Revision: 08-Jul-09
MBRD3..PbF Series
Vishay High Power Products Schottky Rectifier, 3.0 A
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
100
110
120
130
140
160
150
Allowable
C
ase
Temperature
C)
IF(AV) - Average Forward Current (A)
2
1
345
0
DC
See note (1)
Square wave (D = 0.50)
80 % rated V
R applied
0
0.5
1.5
2.5
2.0
1.0
Average
Power
Loss
(W)
IF(AV) - Average Forward Current (A)
2
13
4
5
0
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10
100
1000
I FSM
-
Non-Repetitive
Surge
Current
(A)
tp - Square Wave Pulse Duration (s)
100
1000
10 000
10
At any rated load condition
and with rated V
RRM applied
following surge
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