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参数资料
| 型号： | MBRD660CTTRR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 3 A, 60 V, SILICON, RECTIFIER DIODE, TO-252AA |
| 封装： | PLASTIC, SIMILAR TO TO-252AA, DPAK-3 |
| 文件页数： | 2/7页 |
| 文件大小： | 185K |
| 代理商： | MBRD660CTTRR |
MBRD650CT, MBRD660CT
2
Bulletin PD-20755 rev. E 05/06
www.irf.com
V
FM
Max. Forward Voltage Drop
0.7
V
@
3A
(Per Leg) * See Fig. 1
(1)
0.9
V
@
6A
0.65
V
@
3A
0.85
V
@
6A
I
RM
Max. Reverse Leakage Current
0.1
mA
T
J =
25 °C
(Per Leg) * See Fig. 2
(1)
15
mA
T
J = 125 °C
CT
Typ. Junction Capacitance (Per Leg)
145
pF
VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
LS
Typical Series Inductance (Per Leg)
5.0
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
10000
V/μs (Rated VR)
TJ
Max. Junction Temperature Range (*) -40 to 150
°C
Tstg
Max. Storage Temperature Range
-40 to 150
°C
R
thJC Max. Thermal Resistance (Per Leg)
6
°C/W DC operation
* See Fig. 4
Junction to Case
(PerDevice)
3
R
thJA Max. Thermal Resistance Junction
80
°C/W
to Ambient
wt
Approximate Weight
0.3 (0.01) g (oz.)
Case Style
D-Pak
Similar to TO-252AA
Device Marking
MBRD660CT
Thermal-Mechanical Specifications
T
J =
25 °C
T
J = 125 °C
Electrical Specifications
(1) Pulse Width < 300μs, Duty Cycle <2%
V
R = rated VR
Part number
MBRD650CT
MBRD660CT
V
R
Max. DC Reverse Voltage (V)
50
60
VRWM Max. Working Peak Reverse Voltage (V)
Voltage Ratings
Parameters
Value
Units
Conditions
Parameters
Value
Units
Conditions
I
F(AV) Max. Average Forward(Per Leg)
3.0
A
50% duty cycle @ T
C = 128°C, rectangular wave form
Current * See Fig. 5
(PerDevice)
6
I
FSM
Max.PeakOneCycleNon-Repetitive
490
5μs Sine or 3μs Rect. pulse
Surge Current * See Fig. 7
75
10ms Sine or 6ms Rect. pulse
E
AS
Non-Repet.Aval.Energy (PerLeg)
6
mJ
T
J = 25 °C, IAS = 1 Amp, L = 12 mH
I
AR
Repetitive Avalanche Current
0.6
A
Current decaying linearly to zero in 1 μsec
(Per Leg)
Frequency limited by T
J max. VA = 1.5 x VR typical
Absolute Maximum Ratings
Following any rated
load condition and with
rated V
RRM applied
A
Parameters
Value
Units
Conditions
<
thermal runaway condition for a diode on its own heatsink
(*) dPtot
1
dTj
Rth( j-a)
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