参数资料
型号: MBRF10100CT-M3/4W
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
封装: HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
文件页数: 1/5页
文件大小: 76K
代理商: MBRF10100CT-M3/4W
Document Number: 89321
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 22-Sep-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Dual Common-Cathode High-Voltage Schottky Rectifier
MBRF1090CT, MBRF10100CT
Vishay General Semiconductor
New Product
FEATURES
Trench MOS Schottky technology
Low power losses, high efficiency
Low forward voltage drop
High forward surge capabilty
High frequency operation
Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
Compliant
to
RoHS
directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
90 V, 100 V
IFSM
120 A
VF at IF = 5.0 A
0.75 V
TJ max.
150 °C
PIN 1
PIN 2
PIN 3
TMBS
ITO-220AB
1
2
3
MBRF1090CT
MBRF10100CT
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBRF1090CT
MBRF10100CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current
at TC = 105 °C
total device
IF(AV)
10
A
per diode
5.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
120
A
Voltage rating of change (rated VR)
dV/dt
10 000
V/μs
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
Isolation voltage from termal to heatsink t = 1 min
VAC
1500
V
相关PDF资料
PDF描述
MB24A 2 A, 45 V, SILICON, RECTIFIER DIODE, DO-214AA
MBR30L60CT 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
MMBZ5221BVT/R7 2.4 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
MMBZ5228BWT/R7 3.91 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
MMBZ5235BWT/R13 6.8 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
相关代理商/技术参数
参数描述
MBRF10100CTP 功能描述:DIODE ARRAY SCHOTTKY 100V ITO220 制造商:smc diode solutions 系列:- 包装:管件 零件状态:有效 二极管配置:1 对共阴极 二极管类型:肖特基 电压 - DC 反向(Vr)(最大值):100V 电流 - 平均整流(Io)(每二极管):- 不同 If 时的电压 - 正向(Vf):850mV @ 5A 速度:快速恢复 = 200mA(Io) 反向恢复时间(trr):- 不同?Vr 时的电流 - 反向漏电流:1mA @ 100V 安装类型:通孔 封装/外壳:TO-220-3 隔离片 供应商器件封装:ITO-220AB 标准包装:50
MBRF10100CTR 功能描述:DIODE ARRAY SCHOTTKY 100V ITO220 制造商:smc diode solutions 系列:- 包装:管件 零件状态:有效 二极管配置:1 对共阴极 二极管类型:肖特基 电压 - DC 反向(Vr)(最大值):100V 电流 - 平均整流(Io)(每二极管):- 不同 If 时的电压 - 正向(Vf):850mV @ 5A 速度:快速恢复 = 200mA(Io) 反向恢复时间(trr):- 不同?Vr 时的电流 - 反向漏电流:1mA @ 100V 安装类型:通孔 封装/外壳:TO-220-3 隔离片 供应商器件封装:ITO-220AB 标准包装:50
MBRF10100CT-TU 制造商:LITEON-SEMI 功能描述:10A, 100V, Schottky Diode
MBRF10100D 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:10.0AMPS Isolated Schottky Barrier Rectifier
MBRF10100D C0 功能描述:肖特基二极管与整流器 10A 100V SINGLE SCHOTTKY REC ISOLATD RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel