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参数资料
| 型号： | MBRF1030CT |
| 厂商： | LITE-ON ELECTRONICS INC |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC, ITO-220AB, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 77K |
| 代理商： | MBRF1030CT |
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
4. Device mounted on 50mm x 50 mm x 2 mm Cu Plate.
MBRF1030CT thru 1045CT
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.7 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 45 Volts
FORWARD CURRENT - 10 Amperes
10
125
MBRF1030CT
30
21
30
MBRF1040CT
40
28
40
MBRF1045CT
45
31.5
45
10000
VRMS
VDC
VRRM
I(AV)
IFSM
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
TJ
Operating Temperature Range
C
TSTG
Storage Temperature Range
C
Typical Thermal Resistance (Note 3, 4)
R0JC
C/W
CJ
Typical Junction Capacitance,
per element (Note 2)
pF
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =125 C
mA
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
VF
Maximum Forward
Voltage, (Note 1)
V
Voltage Rate of Change (Rated VR)
TJ =125 C
TJ =25 C
TJ =125 C
@IF=5A
@IF=10A
dv/dt
Maximum Average Forward RectifiedCurrent
at TC=120 C (See Fig.1)
-55 to +150
-55 to +175
4.0
280
0.1
15
0.57
0.70
0.84
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
V/us
SEMICONDUCTOR
LITE-ON
REV. 1, Aug-2007, KTHC50
ITO-220AB
PIN 1
PIN 3
PIN 2
All Dimensions in millimeter
ITO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
15.50
16.50
10.40
10.0
3.00
3.50
9.30
9.00
2.90
3.60
13.46
14.22
1.15
1.70
0.75
2.70
N
M
L
K
J
I
1.00
2.40
0.70
0.45
3.00
3.30
4.36
4.77
2.48
2.80
2.50
G
I
C
E
J
B
K
A
M
D
L
N
F
H
PIN
1
2
3
Vdis
V
Dielectric Strengh from terminals to case,
AC with t=1 minute, RH<30%
2000
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