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参数资料
| 型号： | MBRF20H35CT |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC, ITO-220AB, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 85K |
| 代理商： | MBRF20H35CT |
MBR20HxxCT, MBRF20HxxCT & MBRB20HxxCT Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88787
2
4-Feb-03
Maximum Ratings (TC = 25 °C unless otherwise noted)
Parameter
Symbol MBR20H35CT MBR20H45CT MBR20H50CT MBR20H60CT
Unit
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Max. average forward rectified current
Total device
20
(see fig. 1)
Per leg
IF(AV)
10
A
Peak repetitive forward current at TC = 150 °C per leg
(rated VR, 2.0KHz sq. wave)
IFRM
20
A
Non-repetitive avalanche energy per leg
at 25
°C, IAS = 4 A, L = 10 mH
EAS
80
mJ
Peak forward surge current 8.3 ms single half sine-wave
IFSM
150
A
superimposed on rated load (JEDEC Method) per leg
Peak repetitive reverse surge current per leg
at tp = 2.0
s, 1 KHZ
IRRM
1.0
0.5
A
Peak non-repetitive reverse energy (8/20
s waveform)
ERSM
20
10
mJ
Electrostatic discharge capacitor voltage
VC
25
kV
Human body model: C = 100 pF, R = 1.5 k
Voltage rate of change (rated VR)
dv/dt
10,000
V/
s
Operating junction temperature range
TJ
–65 to +175
°C
Storage temperature range
TSTG
–65 to +175
°C
RMS Isolation voltage (MBRF type only) from terminals
4500(1)
to heatsink with t = 1.0 second, RH
≤ 30%
VISOL
3500(2)
V
1500(3)
Electrical Characteristics (TC = 25 °C unless otherwise noted)
Parameter
Symbol
MBR20H35CT, MBR20H45CT MBR20H50CT, MBR20H60CT
Unit
Typ
Max
Typ
Max
Maximum instantaneous
at IF = 10 A
TJ = 25 °C
–
0.63
–
0.71
forward voltage per leg(4)
at IF = 10 A
TJ = 125 °C
VF
0.49
0.55
0.57
0.61
V
at IF = 20 A
TJ = 25 °C
–
0.75
–
0.85
at IF = 20 A
TJ =125 °C
0.62
0.68
0.71
Maximum instantaneous reverse current
TJ = 25 °C
–
100
–
100
A
at rated DC blocking voltage per leg(4)
TJ =125 °C
IR
4.0
12
2.0
12
mA
Thermal Characteristics (TC = 25 °C unless otherwise noted)
Parameter
Symbol
MBR
MBRF
MBRB
Unit
Thermal resistance from junction to case per leg
R
θJC
2.0
4.0
2.0
°C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(3) Screw mounting with 4-40 screw, where washer diameter is
≤ 4.9 mm (0.19”)
(2) Clip mounting (on case), where leads do overlap heatsink
(4) Pulse test: 300
s pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
Package Option
MBR20H35CT – MBR20H60CT
TO-220AB
45
Anti-Static tube, 50/tube, 2K/carton
MBRF20H35CT – MBRF20H60CT
ITO-220AB
45
Anti-Static tube, 50/tube, 2K/carton
31
13” reel, 800/reel, 4.8K/carton
MBRB20H35CT – MBRB20H60CT
TO-263AB
45
Anti-Static tube, 50/tube, 2K/carton
81
Anti-Static 13” reel, 800/reel, 4.8K/carton
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRF20H45CT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| MBRF20H45CT-E3/45 | 功能描述:肖特基二极管与整流器 45 Volt 20A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRF20H45CTHE3/45 | 功能描述:肖特基二极管与整流器 45 Volt 20A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRF20H50CT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| MBRF20H60CT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier |
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