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参数资料
型号： MBRF25H45CT-HE3/45
厂商： VISHAY SEMICONDUCTORS
元件分类： 整流器
英文描述： 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
封装： ROHS COMPLIANT, ITO-220AB, 3 PIN
文件页数： 1/5页
文件大小： 133K
代理商： MBRF25H45CT-HE3/45
Document Number: 88789
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 18-Mar-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Dual Common-Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
MBR(F,B)25H35CT thru MBR(F,B)25H60CT
Vishay General Semiconductor
New Product
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
Solder
dip
260
°C,
40
s
(for
TO-220AB
and
ITO-220AB package)
AEC-Q101 qualified
Compliant
to
RoHS
directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling
diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test, HE3 suffix for high reliability grade (AEC-Q101
qualified), meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
35 V to 60 V
IFSM
150 A
VF
0.54 V, 0.60 V
IR
100 μA
TJ max.
175 °C
TO-263AB
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR25HxxCT
ITO-220AB
MBRB25HxxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
MBRF25HxxCT
PIN 2
PIN 1
PIN 3
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR25H35CT
MBR25H45CT
MBR25H50CT
MBR25H60CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Max. average forward
rectified current (fig. 1)
total device
IF(AV)
30
A
per diode
15
Non-repetitive avalanche energy per diode
at 25 °C, IAS = 4 A, L = 10 mH
EAS
80
mJ
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
150
A
Peak repetitive reverse surge current per diode
at tp = 2.0 μs, 1 kHz
IRRM
1.0
0.5
A
Peak non-repetitive reverse energy
(8/20 μs waveform)
ERSM
25
20
mJ
相关PDF资料
PDF描述
MBRF25H50CT-E3/45 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRF25H60CT-HE3/45 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR25H45CT-E3/45 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRB25H35CTHE3/45 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB
MBR25H35CT-E3/45 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB
相关代理商/技术参数
参数描述
MBRF25H50CT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier
MBRF25H60CT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier
MBRF25H60CT-E3/45 功能描述:肖特基二极管与整流器 60 Volt 25A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRF25H60CTHE3/45 功能描述:肖特基二极管与整流器 60 Volt 25A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRF300100 功能描述:肖特基二极管与整流器 Schottky Rectifier - 100 V - 300 A - TO-244AB RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
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