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参数资料
型号： MBRF25H45CT-HE3/45
厂商： VISHAY SEMICONDUCTORS
元件分类： 整流器
英文描述： 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
封装： ROHS COMPLIANT, ITO-220AB, 3 PIN
文件页数： 2/5页
文件大小： 133K
代理商： MBRF25H45CT-HE3/45
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 88789
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 18-Mar-10
MBR(F,B)25H35CT thru MBR(F,B)25H60CT
Vishay General Semiconductor
New Product
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
Note
(1) AEC-Q101 qualified
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 k
Ω
VC
25
kV
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBR25H35CT
MBR25H45CT
MBR25H50CT
MBR25H60CT
UNIT
TYP.
MAX.
TYP.
MAX.
Maximum instantaneous forward
voltage per diode
IF = 15 A
TJ = 25 °C
VF (1)
-
0.64
-
0.70
V
TJ = 125 °C
0.50
0.54
0.56
0.60
IF = 30 A
TJ = 25 °C
-
0.74
-
0.85
TJ = 125 °C
0.63
0.67
0.68
0.72
Maximum reverse current at rated VR
per diode
TJ = 25 °C
IR (2)
-
100
-
100
μA
TJ = 125 °C
6.0
20
4.0
20
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
Thermal resistance, junction to case per diode
RθJC
1.5
4.5
1.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR25H45CT-E3/45
1.85
45
50/tube
Tube
ITO-220AB
MBRF25H45CT-E3/45
1.99
45
50/tube
Tube
TO-263AB
MBRB25H45CT-E3/45
1.35
45
50/tube
Tube
TO-263AB
MBRB25H45CT-E3/81
1.35
81
800/reel
Tape and reel
TO-220AB
MBR25H45CTHE3/45 (1)
1.85
45
50/tube
Tube
ITO-220AB
MBRF25H45CTHE3/45 (1)
1.99
45
50/tube
Tube
TO-263AB
MBRB25H45CTHE3/45 (1)
1.35
45
50/tube
Tube
TO-263AB
MBRB25H45CTHE3/81 (1)
1.35
81
800/reel
Tape and reel
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR25H35CT
MBR25H45CT
MBR25H50CT
MBR25H60CT
UNIT
相关PDF资料
PDF描述
MBRF25H50CT-E3/45 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRF25H60CT-HE3/45 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR25H45CT-E3/45 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRB25H35CTHE3/45 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB
MBR25H35CT-E3/45 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB
相关代理商/技术参数
参数描述
MBRF25H50CT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier
MBRF25H60CT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier
MBRF25H60CT-E3/45 功能描述:肖特基二极管与整流器 60 Volt 25A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRF25H60CTHE3/45 功能描述:肖特基二极管与整流器 60 Volt 25A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRF300100 功能描述:肖特基二极管与整流器 Schottky Rectifier - 100 V - 300 A - TO-244AB RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
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