参数资料
型号: MBRF8100
厂商: LITE-ON SEMICONDUCTOR CORP
元件分类: 整流器
英文描述: 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC
封装: ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN
文件页数: 1/3页
文件大小: 127K
代理商: MBRF8100
MBRF8100
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
– 100 Volts
FORWARD CURRENT
– 8 Amperes
FEATURES
Metal of silicon rectifier, majority carrier conduction
Guard ring for transient protection
Low power loss, high efficiency
High surge&current capability, low VF
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
MECHANICAL DATA
Case: ITO-220AC molded plastic
Plastic package has UL flammability classification
94V-0
Terminals: Lead Free Finish, RoHS Compliant, solderable
per MIL-STD-202 Method 208
Moisture sensitivity: level 1 per J-STD-020D
Polarity: As marked on the body
Weight: 1.70 grams
Mounting position: Any
Max. mounting torque = 0.5 N.m (5.1 Kgf-cm)
ITO-220AC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
PARAMETER
SYMBOL
MBRF8100
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
100
V
Maximum RMS Voltage
VRMS
70
V
Maximum DC Blocking Voltage
VDC
100
V
Average Rectified Output Current
@Tc=120°C
IF
8
A
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load
IFSM
125
A
Maximum Forward Voltage
Note(1)
IF=8A@
Tj=25°C
Tj=125°C
VF
0.85
0.75
V
Maximum DC Reverse Current at Rated DC
Blocking Voltage
Tj=25°C
Tj=125°C
IR
0.1
60
mA
Typical Junction Capacitance (2)
CJ
250
PF
Typical thermal resistance Junction to Case (3)
RΘJC
3.5
°C/W
Operating junction temperature range
TJ
-55 to +150
°C
Storage temperature range
TSTG
-55 to +150
°C
Note :
REV. 1, Oct-2010, KTHC88
(1)
300us Pulse Width, 2% Duty Cycle.
(2)
Measured at 1.0MHz and applied reverse voltage of 4.0 VDC.
(3)
Thermal Resistance Junction to Case, device mounted on L50 mm x W50 mm x H1.6 mm Copper Plate Heat Sink,
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