参数资料
型号: MBRM110LT1G
厂商: ON Semiconductor
文件页数: 1/5页
文件大小: 151K
描述: DIODE SCHOTTKY 10V 1A POWERMITE
标准包装: 10
二极管类型: 肖特基
电压 - (Vr)(最大): 10V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 365mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 500µA @ 10V
安装类型: 表面贴装
封装/外壳: DO-216AA
供应商设备封装: Powermite
包装: 标准包装
产品目录页面: 1567 (CN2011-ZH PDF)
其它名称: MBRM110LT1GOSDKR
?
Semiconductor Components Industries, LLC, 2012
January, 2012 ?
Rev. 2
1
Publication Order Number:
MBRM110L/D
MBRM110LT1G,
NRVBM110LT1G,
NRVBM110LT3G
Surface Mount
Schottky Power Rectifier
POWERMITE?
Power Surface Mount Package
The Schottky POWERMITE?
employs the Schottky Barrier
principle with a barrier metal and epitaxial construction that produces
optimal forward voltage drop?reverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the POWERMITE?
has the same thermal performance as the SMA
while being 50% smaller in footprint area, and delivering one of the
lowest height profiles, ?
1.1 mm in the industry. Because of its small
size, it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC?DC and
DC?DC converters, reverse battery protection, and “ORing” of
multiple supply voltages and any other application where performance
and size are critical.
Features
?
Ultra Low VF
?
1st in Marketplace with a 10 VR
Schottky Rectifier
?
Low Profile ?
Maximum Height of 1.1 mm
?
Small Footprint ?
Footprint Area of 8.45 mm
2
?
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
?
ESD Ratings:
?
Human Body Model > 4000 V (Class 3)
?
Machine Model > 400 V (Class C)
?
AEC?Q101 Qualified and PPAP Capable
?
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
?
All Packages are Pb?Free*
Mechanical Characteristics:
?
POWERMITE?
is JEDEC Registered as D0
?216AA
?
Case: Molded Epoxy
?
Epoxy Meets UL 94 V?0 @ 0.125 in
?
Weight: 62 mg (Approximately)
?
Lead and Mounting Surface Temperature for Soldering Purposes:
260?C Maximum for 10 Seconds
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 10 VOLTS
Device Package Shipping?
ORDERING INFORMATION
MBRM110LT1G POWERMITE
(Pb?Free)
3,000 /
Tape & Reel
MBRM110LT3G POWERMITE
(Pb?Free)
12,000 /
Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
POWERMITE
CASE 457
PLASTIC
CATHODE
ANODE
MARKING DIAGRAM
M = Date Code
1L1 = Device Code
= Pb?Free Package
http://onsemi.com
NRVBM110LT1G POWERMITE
(Pb?Free)
3,000 /
Tape & Reel
NRVBM110LT3G POWERMITE
(Pb?Free)
12,000 /
Tape & Reel
12M
1L1
相关PDF资料
PDF描述
MBRM120ET1G DIODE SCHOTTKY 1A 20V POWERMITE
MBRM120LT1G DIODE SCHOTTKY 20V 1A POWERMITE
MBRM130LT1G DIODE SCHOTTKY 30V 1A POWERMITE
MBRM140T1G DIODE SCHOTTKY 40V 1A POWERMITE
MBRM360-13-F DIODE SCHOTTKY 60V 3A PWRMITE3
相关代理商/技术参数
参数描述
MBRM110LT1G 制造商:ON Semiconductor 功能描述:Schottky Rectifier
MBRM110LT3 功能描述:肖特基二极管与整流器 1A 10V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRM110LT3G 功能描述:肖特基二极管与整流器 1A 10V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRM110LT3G 制造商:ON Semiconductor 功能描述:Schottky Rectifier
MBRM120E 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Surface Mount Schottky Power Rectifier