参数资料
型号: MBRP20030CTLG
厂商: ON Semiconductor
文件页数: 1/4页
文件大小: 0K
描述: DIODE SCHOTTKY 30V 100A PWRTAP2
产品变化通告: Product Discontinuation 15/May/2006
标准包装: 25
系列: SWITCHMODE™
电压 - 在 If 时为正向 (Vf)(最大): 600mV @ 200A
电流 - 在 Vr 时反向漏电: 5mA @ 30V
电流 - 平均整流 (Io)(每个二极管): 100A
电压 - (Vr)(最大): 30V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 底座安装
封装/外壳: Powertap II
供应商设备封装: PowerTap II
包装: 托盘
其它名称: MBRP20030CTLGOS
MBRP20030CTL
Preferred Device
POWERTAP t II
SWITCHMODE t Power
Rectifier
The SWITCHMODE Power Rectifier uses the Schottky Barrier
3
principle with a platinum barrier metal. This state ? of ? the ? art device
has the following features:
Features
? Dual Diode Construction ? May Be Paralleled for Higher Current Output
? Guardring for Stress Protection
? Low Forward Voltage Drop
? 150 ° C Operating Junction Temperature
? Recyclable Epoxy
? Guaranteed Reverse Avalanche Energy Capability
? Improved Mechanical Ratings
http://onsemi.com
LOW V F SCHOTTKY
BARRIER RECTIFIER
200 AMPERES, 30 VOLTS
1
2
?
Pb ? Free Packages are Available*
Mechanical Characteristics:
? Case: Epoxy, Molded with metal heatsink base
? Weight: 80 Grams (Approximately)
? Finish: All External Surfaces Corrosion Resistant
? Top Terminal Torque: 25 ? 40 lb ? in Max
? Base Plate Torques: See procedure given in the Package Outline Section
1
3
2
POWERTAP II
CASE 357C
PLASTIC
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V RRM
V RWM
V R
30
V
MARKING DIAGRAM
Average Rectified Forward Current
(At Rated V R , T C = 125 ° C) Per Leg
Per Device
I F(AV)
100
200
A
MCC
AYYWWG
B20030L
Peak Repetitive Forward Current,
(At Rated V R , Square Wave,
20 kHz, T C = 100 ° C)
Non ? Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current
(2.0 m s, 1.0 kHz)
Storage Temperature Range
I FRM
I FSM
I RRM
T stg
200
1500
2.0
? 55 to +150
A
A
A
° C
B20030L
MCC
A
YY
WW
G
= Specific Device Code
= Mold Compound Code
= Assembly Location
= Year
= Work Week
= Pb ? Free Package
Operating Junction Temperature
T J
? 55 to +150
° C
ORDERING INFORMATION
Voltage Rate of Change (Rated V R ) dv/dt 10,000 V/ m s
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Device Package
MBRP20030CTL POWERTAP II
MBRP20030CTLG POWERTAP II
(Pb ? Free)
Shipping
25 Units/Tray
25 Units/Tray
*For additional information on our Pb ? Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
September, 2006 ? Rev. 6
1
Publication Order Number:
MBRP20030CTL/D
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