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参数资料
| 型号： | MDD142-18N1 |
| 厂商： | IXYS |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 描述： | MOD DIODE DUAL 1800V Y4-M6 |
| 标准包装： | 6 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.3V @ 300A |
| 电流 - 在 Vr 时反向漏电： | 20mA @ 1800V |
| 电流 - 平均整流 (Io)（每个二极管）： | 165A |
| 电压 - (Vr)（最大）： | 1800V（1.8kV） |
| 二极管类型： | 标准 |
| 速度： | 标准恢复 >500ns，> 200mA（Io） |
| 二极管配置： | 1 对串联 |
| 安装类型： | 底座安装 |
| 封装/外壳： | Y4-M6 |
| 供应商设备封装： | Y4-M6 |
| 包装： | 散装 |
MDD 142
High Power
Diode Modules
I FRMS = 2x 300 A
I FAVM = 2x 165 A
V RRM = 800-1800 V
V RSM
V RRM
Type
3
1
2
1
2
3
V
V
900
1300
1500
1700
1900
800
1200
1400
1600
1800
MDD 142-08N1
MDD 142-12N1
MDD 142-14N1
MDD 142-16N1
MDD 142-18N1
Symbol
Test Conditions
Maximum Ratings
Features
V R = 0
T VJ = T VJM
V R = 0
I FRMS
I FAVM
I FSM
T VJ = T VJM
T C = 100 ° C; 180 ° sine
T VJ = 45 ° C; t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
(50 Hz), sine
(60 Hz), sine
(50 Hz), sine
(60 Hz), sine
300 A
165 A
4700 A
5000 A
4100 A
4300 A
q
q
q
q
q
International standard package
Direct copper bonded Al 2 O 3 -ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
Space and weight savings
ò i 2 dt
T VJ
T VJM
T stg
T VJ = 45 ° C
V R = 0
T VJ = T VJM
V R = 0
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
(50 Hz), sine
(60 Hz), sine
(50 Hz), sine
(60 Hz), sine
110 000
104 000
84 000
77 000
-40...+150
150
-40...+125
A 2 s
A 2 s
A 2 s
A 2 s
° C
° C
° C
Applications
q
q
q
q
Advantages
q
V ISOL
M d
Weight
50/60 Hz, RMS t = 1 min
I ISOL ￡ 1 mA t=1s
Mounting torque (M6)
Terminal connection torque (M6)
Typical including screws
3000 V~
3600 V~
2.25-2.75/20-25 Nm/lb.in.
4.5-5.5/40-48 Nm/lb.in.
120 g
q
q
q
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
Symbol
I R
Test Conditions
T VJ = T VJM ; V R = V RRM
Characteristic Values
20 mA
V F
V T0
r T
Q S
I RM
R thJC
I F = 300 A; T VJ = 25 ° C
For power-loss calculations only
T VJ = T VJM
T VJ = 125 ° C; I F = 300 A, -di/dt = 50 A/ m s
per diode; DC current
1.3
0.8
1.3
550
235
0.21
V
V
m W
m C
A
K/W
per module
other values
0.105
K/W
R thJK
per diode; DC current
per module
see Fig. 6/7
0.31
0.155
K/W
K/W
d S
d A
a
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
12.7
9.6
50
mm
mm
m/s 2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
? 2000 IXYS All rights reserved
1-3
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相关代理商/技术参数 |
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|---|---|
| MDD172 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:High Power Diode Modules |
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