参数资料
型号: MBRS140TRPBF
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 40 V, SILICON, SIGNAL DIODE, DO-214AA
封装: LEAD FREE, SIMILAR TO DO-214AA, SMB, 2 PIN
文件页数: 2/7页
文件大小: 129K
代理商: MBRS140TRPBF
MBRS140TR
Bulletin PD-20591 rev. E 07/04
2
www.irf.com
Part number
MBRS140TR
VR
Max. DC Reverse Voltage (V)
V
RWM Max. Working Peak Reverse Voltage (V)
40
Voltage Ratings
I
F(AV) Max. Average Forward Current
1.0
A
50% duty cycle @ T
L = 119 °C, rectangular wave form
I
FSM
Max.PeakOneCycleNon-Repetitive
380
A
5s Sine or 3s Rect. pulse
Surge Current
40
10ms Sine or 6ms Rect. pulse
E
AS
Non- Repetitive Avalanche Energy
3.0
mJ
T
J = 25 °C, IAS = 1A, L = 6mH
I
AR
Repetitive Avalanche Current
1.0
A
Current decaying linearly to zero in 1 sec
Frequency limited by T
J max. Va = 1.5 x Vr typical
Parameters
Value Units Conditions
Absolute Maximum Ratings
Following any rated
load condition and
with rated V
RRM applied
Parameters
Typ.
Max
Units
Conditions
V
FM
Max. Forward Voltage Drop
(1)
0.52
0.6
V
@ 1A
0.70
0.77
V
@ 2A
0.48
0.53
V
@ 1A
0.63
0.71
V
@ 2A
I
RM
Max. Reverse Leakage Current (1)
-
0.1
mA
TJ = 25°C
-
4.0
mA
T
J = 125°C
CT
Max. Junction Capacitance
-
80
pF
VR = 5VDC(test signal range 100KHz to 1Mhz)25°C
LS
Typical Series Inductance
-
2.0
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
-
10000
V/s
(Rated VR)
Electrical Specifications
V
R = rated VR
T
J = 125 °C
T
J = 25 °C
(1) Pulse Width < 300s, Duty Cycle < 2%
T
J
Max. Junction Temperature Range(*) -55 to150
°C
T
stg
Max.StorageTemperature Range
-55 to150
°C
R
thJL
Max.Thermal Resistance
36
°C/W DCoperation(SeeFig.4)
Junction to Lead
(**)
R
thJA Max. Thermal Resistance
80
°C/W DC operation
Junction to Ambient
wt
Approximate Weight
0.10 (0.003) g (oz.)
Case Style
SMB
Similar to DO-214AA
Device Marking
IR14
Thermal-Mechanical Specifications
Parameters
Value
Units
Conditions
(**) Mounted 1 inch square PCB
<
thermal runaway condition for a diode on its own heatsink
(*) dPtot
1
dTj
Rth( j-a)
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