参数资料
型号: MBRS320TR
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 整流器
英文描述: 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AB
封装: SIMILAR TO DO-214AB, SMC, 2 PIN
文件页数: 2/6页
文件大小: 96K
代理商: MBRS320TR
www.vishay.com
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94320
2
Revision: 15-Aug-08
MBRS320TRPbF
Vishay High Power Products Schottky Rectifier, 3.0 A
Note
(1) Pulse width < 300 s, duty cycle < 2 %
Notes
(1)
thermal runaway condition for a diode on its own heatsink
(2) Mounted 1" square PCB
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TYP.
MAX.
UNITS
Maximum forward voltage drop
VFM (1)
3 A
TJ = 25 °C
0.41
0.45
V
6 A
0.45
0.53
3 A
TJ = 125 °C
0.29
0.36
6 A
0.35
0.46
Maximum reverse leakage current
IRM (1)
TJ = 25 °C
VR = Rated VR
0.04
0.5
mA
TJ = 100 °C
8.0
20
TJ = 125 °C
23
35
Typical junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
360
-
pF
Typical series inductance
LS
Measured lead to lead 5 mm from package body
3.0
-
nH
Maximum voltage rate of change
dV/dt
Rated VR
-
10 000
V/s
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ (1), TStg
- 65 to 150
°C
Maximum thermal resistance,
junction to lead
RthJL (2)
DC operation
12
°C/W
Maximum thermal resistance,
junction to ambient
RthJA
46
Approximate weight
0.24
g
0.008
oz.
Marking device
Case style SMC (similar to DO-214AB)
V32
dP
tot
dT
J
-------------
1
R
thJA
--------------
<
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