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参数资料
| 型号： | MBRS330T3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 101K |
| 描述： | DIODE SCHOTTKY 30V 4A SMC |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 10 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 30V |
| 电流 - 平均整流 (Io)： | 4A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 500mV @ 3A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 2mA @ 30V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AB，SMC |
| 供应商设备封装： | SMC |
| 包装： | 剪切带 (CT) |
| 其它名称： | MBRS330T3OSCT |
MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G,
SBRS8340T3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MBRS320T3G,
SBRS8320T3G
MBRS330T3G,
NRVBRS330T3G
MBRS340T3G,
SBRS8340T3G
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
20
30
40
V
Average Rectified Forward Current
IF(AV)
3.0 @ TL
= 110
°C
4.0 @ TL
= 105
°C
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
IFSM
80
A
Operating Junction Temperature
TJ
?
65 to +150
°C
ISO 7637 Pulse #1
(100 V, 10)
5000
Pulses
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Thermal Resistance, Junction?to?Lead
RJL
11
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(iF
= 3.0 A, T
J
= 25
°C)
VF
0.50
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ
= 25
°C)
(Rated dc Voltage, TJ
= 100
°C)
iR
2.0
20
mA
1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
TYPICAL ELECTRICAL CHARACTERISTICS
10
0.1
0 0.4 0.60.1 0.5 0.7 0.90.3
0.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
1
0.8
i
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
TJ
= 25
°C
TJ
= 125
°C
TJ
= 100
°C
TJ
=
?65°C
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)
i
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
1.0
10
0.1
0 0.4 0.60.1 0.5 0.7 0.9 1.00.3
0.2
1
0.8
TJ
= 25
°C
TJ
= 125
°C
TJ
= 100
°C
TJ
=
?65°C
TJ
=
?40°C
TJ
=
?40°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRS330T3_05 | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
| MBRS330T3G | 功能描述:肖特基二极管与整流器 3A 30V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRS330T3G | 制造商:ON Semiconductor 功能描述:Schottky Rectifier |
| MBRS330T3G-CUT TAPE | 制造商:ON 功能描述:MBRS330T3 Series 30 V 80 A Surface Mount Schottky Power Rectifier - CASE 403 |
| MBRS340 | 功能描述:肖特基二极管与整流器 3.0a Power Rectifier Schottky RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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