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参数资料
| 型号： | MBRV7030CTL |
| 厂商： | MOTOROLA INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | TOOLS, ELECTRONIC KITS RoHS Compliant: NA |
| 中文描述： | 35 A, 30 V, SILICON, RECTIFIER DIODE |
| 文件页数： | 1/8页 |
| 文件大小： | 158K |
| 代理商： | MBRV7030CTL |
1
Motorola, Inc. 1997
D3PAK Power Surface Mount Package
Employing the Schottky Barrier principle in a large area metal–to–silicon power
rectifier. Features epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency switching power supplies;
free wheeling diodes and polarity protection diodes.
Compact Package Ideal for Automated Handling
Short Heat Sink Tab Manufactured — Not Sheared
Highly Stable Oxide Passivated Junction
Guardring for Over–voltage Protection
Low Forward Voltage Drop
Monolithic Dual Die Construction. May be Paralleled for High Current Output.
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 2 Grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Maximum Temperature of 260
°
C for 10 Seconds for Soldering
Shipped 29 Units per Plastic Tube
Marking: MBRV7030CTL
MAXIMUM RATINGS
Rating
Symbol
VRRM
VRWM
VR
IO
Value
30
Unit
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 135
°
C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 135
°
C)
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
Per Leg
Per Package
35
70
A
Per Leg
IFRM
70
A
Per Package
IFSM
500
A
Storage / Operating Case Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated VR, TJ = 25
°
C)
THERMAL CHARACTERISTICS
Tstg, TC
TJ
dv/dt
– 55 to 150
– 55 to 150
10,000
°
C
°
C
V/ s
Thermal Resistance — Junction–to–Case
Thermal Resistance — Junction–to–Ambient (2)
Per Leg
Per Leg
RJC
RJA
0.59
54
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1), see Figure 2
(IF = 35 A, TJ = 25
°
C)
(IF = 70 A, TJ = 25
°
C)
(IF = 35 A, TJ = 100
°
C)
Maximum Instantaneous Reverse Current, see Figure 4
(Rated VR, TJ = 25
°
C)
(Rated VR, TJ = 100
°
C)
(1) Pulse Test: Pulse Width
≤
250
μ
s, Duty Cycle
≤
2%
(2) Rating applies when using minimum pad size, FR4 PC Board
Per Leg
VF
0.50
0.62
0.47
V
Per Leg
IR
2.0
40
mA
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and Switchmode are trademarks of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MBRV7030CTL/D
SEMICONDUCTOR TECHNICAL DATA
SCHOTTKY BARRIER
RECTIFIER
70 AMPERES
30 VOLTS
CASE 433A–01, Style 1
D3PAK
1
3
2
1
2
3
Motorola Preferred Device
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR-W10005 | 制造商:GOOD-ARK 制造商全称:GOOD-ARK Electronics 功能描述:SILICON BRIDGE RECTIFIERS |
| MBR-W1001 | 制造商:GOOD-ARK 制造商全称:GOOD-ARK Electronics 功能描述:SILICON BRIDGE RECTIFIERS |
| MBR-W1002 | 制造商:GOOD-ARK 制造商全称:GOOD-ARK Electronics 功能描述:SILICON BRIDGE RECTIFIERS |
| MBR-W1004 | 制造商:GOOD-ARK 制造商全称:GOOD-ARK Electronics 功能描述:SILICON BRIDGE RECTIFIERS |
| MBR-W1006 | 制造商:GOOD-ARK 制造商全称:GOOD-ARK Electronics 功能描述:SILICON BRIDGE RECTIFIERS |
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