参数资料
型号: MBT3906DW1T1
厂商: MOTOROLA INC
元件分类: 小信号晶体管
英文描述: 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
文件页数: 2/12页
文件大小: 277K
代理商: MBT3906DW1T1
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
10
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MBT3906DW1T1 (PNP)
TYPICAL STATIC CHARACTERISTICS
Figure 31. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h
,DC
CURRENT
GAIN
(NORMALIZED)
0.5
2.0
3.0
10
50
70
0.2
0.3
0.1
100
1.0
0.7
200
30
20
5.0
7.0
FE
VCE = 1.0 V
TJ = +125°C
+25
°C
–55
°C
MBT3906DW1T1 (PNP)
Figure 32. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V
,COLLECT
OR
EMITTER
VOL
TAGE
(VOL
TS)
0.5
2.0
3.0
10
0.2
0.3
0
1.0
0.7
5.0
7.0
CE
IC = 1.0 mA
TJ = 25°C
0.07
0.05
0.03
0.02
0.01
10 mA
30 mA
100 mA
MBT3906DW1T1 (PNP)
Figure 33. “ON” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 34. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V
,VOL
TAGE
(VOL
TS)
1.0
2.0
5.0
10
20
50
0
100
– 0.5
0
0.5
1.0
0
60
80
120
140
160
180
20
40
100
200
– 1.0
– 1.5
– 2.0
200
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
+25
°C TO +125°C
–55
°C TO +25°C
+25
°C TO +125°C
–55
°C TO +25°C
qVC FOR VCE(sat)
qVB FOR VBE(sat)
,TEMPERA
TURE
COEFFICIENTS
(mV/
C)
°
Vq
MBT3906DW1T1 (PNP)
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