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参数资料
| 型号： | MBT3906DW1T1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 7/12页 |
| 文件大小： | 277K |
| 代理商： | MBT3906DW1T1 |
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MBT3904DW1T1 (NPN)
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
+3 V
275
10 k
1N916
Cs < 4 pF*
+3 V
275
10 k
Cs < 4 pF*
< 1 ns
– 0.5 V
+10.9 V
300 ns
DUTY CYCLE = 2%
< 1 ns
– 9.1 V
′
+10.9 V
DUTY CYCLE = 2%
t1
0
10 < t1 < 500 ms
* Total shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 4. Charge Data
IC, COLLECTOR CURRENT (mA)
5000
1.0
VCC = 40 V
IC/IB = 10
Q,
CHARGE
(pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
CAP
ACIT
ANCE
(pF)
1.0
2.0 3.0
5.0 7.0 10
20 30 40
0.2 0.3
0.5 0.7
QT
QA
Cibo
Cobo
TJ = 25°C
TJ = 125°C
MBT3904DW1T1 (NPN)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBT3906DW1T1G | 功能描述:两极晶体管 - BJT SS GP XSTR PNP 40V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MBT3906DW1T1G_09 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual General Purpose Transistor |
| MBT3906DW1T2G | 制造商:ON Semiconductor 功能描述:SS SC88 GP XSTR PNP 40V - Tape and Reel 制造商:ON Semiconductor 功能描述:Dual PNP Bipolar Transistor 制造商:ON Semiconductor 功能描述:REEL - SS SC88 GP XSTR PNP 40V |
| MBT3906DW1T3 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel 制造商:ON Semiconductor 功能描述: |
| MBT3946DW | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Dual General Purpose Transistor NPN+PNP Silicon |
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