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参数资料
| 型号： | MC-4516CB647XFA-A75 |
| 厂商： | ELPIDA MEMORY INC |
| 元件分类： | DRAM |
| 英文描述： | 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| 中文描述： | 16M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 |
| 封装： | DIMM-168 |
| 文件页数： | 11/14页 |
| 文件大小： | 167K |
| 代理商： | MC-4516CB647XFA-A75 |
EOL
Product
Data Sheet E0232N20 (Ver. 2.0)
6
MC-4516CB647XFA
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
-A75
Parameter
Symbol
Test condition
MIN.
MAX.
Unit
Notes
Operating current
ICC1
Burst length = 1
/CAS latency = 2
800
mA
1
tRC
≥ tRC(MIN.), IO = 0 mA
/CAS latency = 3
840
Precharge standby current in
ICC2P
CKE
≤ VIL(MAX.), tCK = 15 ns
8
mA
power down mode
ICC2PS CKE
≤ VIL(MAX.), tCK = ∞
8
Precharge standby current in
non power down mode
ICC2N
CKE
≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.),
Input signals are changed one time during
30 ns.
160
mA
ICC2NS CKE
≥ VIH(MIN.), tCK = ∞ Input
signals are stable.
64
Active standby current in
ICC3P
CKE
≤ VIL(MAX.), tCK = 15 ns
40
mA
power down mode
ICC3PS CKE
≤ VIL(MAX.), tCK = ∞
32
Active standby current in non
power down mode
ICC3N
CKE
≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.),
Input signals are changed one time during
30 ns.
240
mA
ICC3NS
CKE
≥ VIH(MIN.), tCK = ∞, Input signals are stable.
160
mA
Operating current
ICC4
tCK
≥ tCK(MIN.)
/CAS latency = 2
960
mA
2
(Burst mode)
IO = 0 mA
/CAS latency = 3
1,240
CBR (Auto) refresh current
ICC5
tRC
≥ tRC(MIN.)
/CAS latency = 2
1,840
mA
3
/CAS latency = 3
1,920
Self refresh current
ICC6
CKE
≤ 0.2 V
16
mA
Input leakage current
II(L)
VI = 0 to 3.6 V, All other pins not under
test = 0 V
– 8
+ 8
A
Output leakage current
IO(L)
DOUT is disabled, VO = 0 to 3.6 V
– 1.5
+ 1.5
A
High level output voltage
VOH
IO = – 4.0 mA
2.4
V
Low level output voltage
VOL
IO = + 4.0 mA
0.4
V
Notes 1. ICC1 depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, ICC1 is measured on condition that addresses are changed only one time during tCK (MIN.).
2. ICC4 depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, ICC4 is measured on condition that addresses are changed only one time during tCK (MIN.).
3. ICC5 is measured on condition that addresses are changed only one time during tCK (MIN.).
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| MC-4516CB647XFA | 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
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| MC-4516CB64ES | 制造商:NEC 制造商全称:NEC 功能描述:16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
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