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参数资料
| 型号： | MC-4516CB647XFA-A75 |
| 厂商： | ELPIDA MEMORY INC |
| 元件分类： | DRAM |
| 英文描述： | 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| 中文描述： | 16M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 |
| 封装： | DIMM-168 |
| 文件页数： | 13/14页 |
| 文件大小： | 167K |
| 代理商： | MC-4516CB647XFA-A75 |
EOL
Product
Data Sheet E0232N20 (Ver. 2.0)
8
MC-4516CB647XFA
Synchronous Characteristics
Parameter
Symbol
-A 75
Unit
Note
MIN.
MAX.
Clock cycle time
/CAS latency = 3
tCK3
7.5
(133 MHz)
ns
/CAS latency = 2
tCK2
10
(100 MHz)
ns
Access time from CLK
/CAS latency = 3
tAC3
5.4
ns
1
/CAS latency = 2
tAC2
6.0
ns
1
CLK high level width
tCH
2.5
ns
CLK low level width
tCL
2.5
ns
Data-out hold time
tOH
3.0
ns
1
Data-out low-impedance time
tLZ
0
ns
Data-out high-impedance time
/CAS latency = 3
tHZ3
3.0
5.4
ns
/CAS latency = 2
tHZ2
3.0
6.0
ns
Data-in setup time
tDS
1.5
ns
Data-in hold time
tDH
0.8
ns
Address setup time
tAS
1.5
ns
Address hold time
tAH
0.8
ns
CKE setup time
tCKS
1.5
ns
CKE hold time
tCKH
0.8
ns
CKE setup time (Power down exit)
tCKSP
1.5
ns
Command (/CS0, /CS2, /RAS, /CAS, /WE,
tCMS
1.5
ns
DQMB0 - DQMB7) setup time
Command (/CS0, /CS2, /RAS, /CAS, /WE,
tCMH
0.8
ns
DQMB0 - DQMB7) hold time
Note 1. Output load
Output
Z = 50
50 pF
Remark These specifications are applied to the monolithic device.
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相关代理商/技术参数 |
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| MC-4516CB64ES | 制造商:NEC 制造商全称:NEC 功能描述:16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
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| MC-4516CB64PS-A10B | 制造商:NEC 制造商全称:NEC 功能描述:16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641ES | 制造商:NEC 制造商全称:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
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