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参数资料
| 型号： | MC-4516DA727XFA-A75 |
| 厂商： | ELPIDA MEMORY INC |
| 元件分类： | DRAM |
| 英文描述： | 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| 中文描述： | 16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 |
| 封装： | DIMM-168 |
| 文件页数： | 10/14页 |
| 文件大小： | 179K |
| 代理商： | MC-4516DA727XFA-A75 |
EOL
Product
Data Sheet E0278N20 (Ver. 2.0)
5
MC-4516DA727XFA
Electrical Specifications
All voltages are referenced to VSS (GND).
After power up, wait more than 1 ms and then, execute power on sequence and CBR (Auto) refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Voltage on power supply pin relative to GND
VCC
–0.5 to +4.6
V
Voltage on input pin relative to GND
VT
–0.5 to +4.6
V
Short circuit output current
IO
50
mA
Power dissipation
PD
10
W
Operating ambient temperature
TA
0 to +70
°C
Storage temperature
Tstg
–55 to +125
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Supply voltage
VCC
3.0
3.3
3.6
V
High level input voltage
VIH
2.0
VCC + 0.3
V
Low level input voltage
VIL
–0.3
+ 0.8
V
Operating ambient temperature
TA
0
70
°C
Capacitance (TA = 25
°°°°C, f = 1 MHz)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Input capacitance
CI1
A0 - A11, BA0 (A13), BA1 (A12), /RAS,
/CAS, /WE
4
10
pF
CI2
CLK0
15
25
CI3
CKE0
4
10
CI4
/CS0, /CS2
4
10
CI5
DQMB0 - DQMB7
3
10
Data input/output capacitance
CI/O
DQ0 - DQ63, CB0 - CB7
5
13
pF
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| MC-4516DA727XFB-A75 | 制造商:ELPIDA 制造商全称:Elpida Memory 功能描述:16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
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