- 您现在的位置：买卖IC网 > PDF目录224198 > MC-4532DA726EF-A80 32M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 PDF资料下载
参数资料
| 型号： | MC-4532DA726EF-A80 |
| 元件分类： | DRAM |
| 英文描述： | 32M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 |
| 封装： | DIMM-168 |
| 文件页数： | 16/24页 |
| 文件大小： | 242K |
| 代理商： | MC-4532DA726EF-A80 |
Data Sheet M13633EJ5V0DS00
23
MC-4532DA726
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note:
Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control
must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS
Note:
No connection for CMOS device inputs can be cause of malfunction. If no connection is provided
to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels
of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused
pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of
being an output pin. All handling related to the unused pins must be judged device by device and
related specifications governing the devices.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note:
Power-on does not necessarily define initial status of MOS device. Production process of MOS
does not define the initial operation status of the device. Immediately after the power source is
turned ON, the devices with reset function have not yet been initialized. Hence, power-on does
not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.
相关PDF资料 |
PDF描述 |
|---|---|
| MC-454BA80F-A12 | 4M X 80 SYNCHRONOUS DRAM MODULE, 9.5 ns, DMA200 |
| MC10130FN | 10K SERIES, DUAL LOW LEVEL TRIGGERED D LATCH, COMPLEMENTARY OUTPUT, PQCC20 |
| MC105M | RECTANGULAR CONNECTOR |
| MC108NP-562 | SHIELDED, VARIABLE INDUCTOR |
| MC108NP-392 | SHIELDED, VARIABLE INDUCTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MC-4532DA726EFB-A10 | 制造商:NEC 制造商全称:NEC 功能描述:32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| MC-4532DA726EFB-A80 | 制造商:NEC 制造商全称:NEC 功能描述:32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| MC-4532DA726PFB-A10 | 制造商:NEC 制造商全称:NEC 功能描述:32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| MC-4532DA726PFB-A80 | 制造商:NEC 制造商全称:NEC 功能描述:32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| MC-4532DA726XFB-A10 | 制造商:ELPIDA 制造商全称:Elpida Memory 功能描述:32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
发布紧急采购，3分钟左右您将得到回复。