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参数资料
| 型号： | MC-4532DA726EF-A80 |
| 元件分类： | DRAM |
| 英文描述： | 32M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 |
| 封装： | DIMM-168 |
| 文件页数： | 23/24页 |
| 文件大小： | 242K |
| 代理商： | MC-4532DA726EF-A80 |
Data Sheet M13633EJ5V0DS00
8
MC-4532DA726
DC Characteristics (Recommended Operating Conditions unless otherwise noted)
[ MC-4532DA726EF ]
Parameter
Symbol
Test condition
Grade
MIN.
MAX.
Unit
Notes
Operating current
ICC1
Burst length = 1
/CAS latency = 2
-A80
2,100
mA
1
tRC
≥ tRC (MIN.), IO = 0 mA
-A10
2,100
/CAS latency = 3
-A80
2,100
-A10
2,100
Precharge standby current in
ICC2P
CKE
≤ VIL (MAX.), tCK = 15 ns
268
mA
power down mode
ICC2PS
CKE
≤ VIL (MAX.), tCK = ∞
29
Precharge standby current in
ICC2N
CKE
≥ VIH (MIN.), tCK = 15 ns, /CS ≥ VIH (MIN.),
610
mA
non power down mode
Input signals are changed one time during 30 ns.
ICC2NS
CKE
≥ VIH (MIN.), tCK = ∞ ,
144
Input signals are stable.
Active standby current in
ICC3P
CKE
≤ VIL (MAX.), tCK = 15 ns
340
mA
power down mode
ICC3PS
CKE
≤ VIL (MAX.), tCK = ∞
72
Active standby current in
ICC3N
CKE
≥ VIH (MIN.), tCK = 15 ns, /CS ≥ VIH (MIN.),
790
mA
non power down mode
Input signals are changed one time during 30 ns.
ICC3NS
CKE
≥ VIH (MIN.), tCK = ∞ ,
360
Input signals are stable.
Operating current
ICC4
tCK
≥ tCK (MIN.), IO = 0 mA
/CAS latency = 2
-A80
2,190
mA
2
(Burst mode)
-A10
1,830
/CAS latency = 3
-A80
2,640
-A10
2,280
CBR (Auto) Refresh current
ICC5
tRC
≥ tRC (MIN.)
/CAS latency = 2
-A80
4,260
mA
3
-A10
4,260
/CAS latency = 3
-A80
4,260
-A10
4,260
Self refresh current
ICC6
CKE
≤ 0.2 V
286
mA
Input leakage current
II (L)
VI = 0 to 3.6 V, All other pins not under test = 0 V
–10
+10
A
Output leakage current
IO (L)
DOUT is disabled, VO = 0 to 3.6 V
–1.5
+1.5
A
High level output voltage
VOH
IO = –4.0 mA
2.4
V
Low level output voltage
VOL
IO = +4.0 mA
0.4
V
Notes 1. ICC1 depends on output loading and cycle rates. Specified values are obtained with the output open.
In addition to this, ICC1 is measured on condition that addresses are changed only one time during tCK (MIN.).
2.ICC4 depends on output loading and cycle rates. Specified values are obtained with the output open.
In addition to this, ICC4 is measured on condition that addresses are changed only one time during tCK (MIN.).
3. ICC5 is measured on condition that addresses are changed only one time during tCK (MIN.).
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MC-4532DA726EFB-A10 | 制造商:NEC 制造商全称:NEC 功能描述:32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| MC-4532DA726EFB-A80 | 制造商:NEC 制造商全称:NEC 功能描述:32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| MC-4532DA726PFB-A10 | 制造商:NEC 制造商全称:NEC 功能描述:32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| MC-4532DA726PFB-A80 | 制造商:NEC 制造商全称:NEC 功能描述:32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| MC-4532DA726XFB-A10 | 制造商:ELPIDA 制造商全称:Elpida Memory 功能描述:32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
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