参数资料
型号: MC100EP446FAR2
厂商: ON Semiconductor
文件页数: 17/20页
文件大小: 0K
描述: IC CONV 8BIT SER/PAR ECL 32LQFP
产品变化通告: LTB Notification 03/Jan/2008
标准包装: 1
应用: 数据管理
接口: 差分
电源电压: 3 V ~ 5.5 V
封装/外壳: 32-LQFP
供应商设备封装: 32-LQFP(7x7)
包装: 剪切带 (CT)
安装类型: 表面贴装
其它名称: MC100EP446FAROSCT
MC10EP446, MC100EP446
http://onsemi.com
6
Table 7. 10EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 2)
Symbol
Characteristic
40°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
IEE
Power Supply Current
90
110
140
90
110
140
95
115
145
mA
VOH
Output HIGH Voltage (Note 3)
2165 2290 2415 2230 2355 2480 2290 2415 2540
mV
VOL
Output LOW Voltage (Note 3)
1365 1490 1615 1430 1555 1680 1490 1615 1740
mV
VIH
Input HIGH Voltage (SingleEnded)
CMOS
PECL
TTL
2000
2090
2000
3300
2000
2155
2000
3300
2000
2215
2000
3300
mV
VIL
Input LOW Voltage (SingleEnded)
CMOS
PECL
TTL
0
1365
0
800
1690
800
0
1460
0
800
1755
800
0
1490
0
800
1815
800
mV
VBB
Output Voltage Reference
1790 1840 1990 1855 1905 2055 1915 1965 2115
mV
VIHCMR
Input HIGH Voltage Common Mode Range (Dif-
ferential Configuration) (Note 4)
2.0
3.3
2.0
3.3
2.0
3.3
V
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
(All Except SYNC, SYNC)
SYNC, SYNC
0.5
150
0.5
150
0.5
150
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to 2.2 V.
3. All loading with 50 W to VCC 2.0 V.
4. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
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