
MC14538B
http://onsemi.com
4
SWITCHING CHARACTERISTICS (Note 4) (CL = 50 pF, TA = 25_C) Characteristic
Symbol
VDD
Vdc
All Types
Unit
Min
Typ
Max
Output Rise Time
tTLH = (1.35 ns/pF) CL + 33 ns
tTLH = (0.60 ns/pF) CL + 20 ns
tTLH = (0.40 ns/pF) CL + 20 ns
tTLH
5.0
10
15
100
50
40
200
100
80
ns
Output Fall Time
tTHL = (1.35 ns/pF) CL + 33 ns
tTHL = (0.60 ns/pF) CL + 20 ns
tTHL = (0.40 ns/pF) CL + 20 ns
tTHL
5.0
10
15
100
50
40
200
100
80
ns
Propagation Delay Time
A or B to Q or Q
tPLH, tPHL = (0.90 ns/pF) CL + 255 ns
tPLH, tPHL = (0.36 ns/pF) CL + 132 ns
tPLH, tPHL = (0.26 ns/pF) CL + 87 ns
tPLH,
tPHL
5.0
10
15
300
150
100
600
300
220
ns
Reset to Q or Q
tPLH, tPHL = (0.90 ns/pF) CL + 205 ns
tPLH, tPHL = (0.36 ns/pF) CL + 107 ns
tPLH, tPHL = (0.26 ns/pF) CL + 82 ns
5.0
10
15
250
125
95
500
250
190
ns
Input Rise and Fall Times
Reset
tr, tf
5
10
15
15
5
4
ms
B Input
5
10
15
300
1.2
0.4
1.0
0.1
0.05
ms
A Input
5
10
15
No Limit
Input Pulse Width
A, B, or Reset
tWH,
tWL
5.0
10
15
170
90
80
85
45
40
ns
Retrigger Time
trr
5.0
10
15
0
ns
Output Pulse Width — Q or Q
Refer to Figures 8 and 9
CX = 0.002 mF, RX = 100 kW
T
5.0
10
15
198
200
202
210
212
214
230
232
234
ms
CX = 0.1 mF, RX = 100 kW
5.0
10
15
9.3
9.4
9.5
9.86
10
10.14
10.5
10.6
10.7
ms
CX = 10 mF, RX = 100 kW
5.0
10
15
0.91
0.92
0.93
0.965
0.98
0.99
1.03
1.04
1.06
s
Pulse Width Match between circuits in
the same package.
CX = 0.1 mF, RX = 100 kW
100
[(T1 – T2)/T1]
5.0
10
15
± 1.0
± 5.0
%
4. The formulas given are for the typical characteristics only at 25_C.
5. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
OPERATING CONDITIONS
External Timing Resistance
RX
5.0
kW
External Timing Capacitance
CX
0
No Limit
mF
6. The maximum usable resistance RX is a function of the leakage of the capacitor CX, leakage of the MC14538B, and leakage due to board
layout and surface resistance. Susceptibility to externally induced noise signals may occur for RX > 1 MW..
7. If CX > 15 mF, use discharge protection diode per Fig. 11.