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参数资料
| 型号： | MC33152VDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 11/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER DUAL HS 8-SOIC |
| 标准包装： | 1 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 55ns |
| 电流 - 峰： | 1.5A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 6.1 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | MC33152VDR2GOSCT |
MC34152, MC33152, NCV33152
PACKAGE DIMENSIONS
PDIP ? 8
P SUFFIX
CASE 626 ? 05
ISSUE N
NOTE 8
A1
D1
8
1
e/2
e
D
TOP VIEW
5
4
b2
A
E1
B
A2
A
L
8X b
H
NOTE 3
SEATING
PLANE
C
E
c
END VIEW
WITH LEADS CONSTRAINED
NOTE 5
M
eB
END VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACK-
AGE SEATED IN JEDEC SEATING PLANE GAUGE GS ? 3.
4. DIMENSIONS D, D1 AND E1 DO NOT INCLUDE MOLD FLASH
OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE NOT
TO EXCEED 0.10 INCH.
5. DIMENSION E IS MEASURED AT A POINT 0.015 BELOW DATUM
PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR
TO DATUM C.
6. DIMENSION E3 IS MEASURED AT THE LEAD TIPS WITH THE
LEADS UNCONSTRAINED.
7. DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE
LEADS, WHERE THE LEADS EXIT THE BODY.
8. PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE
CORNERS).
INCHES
MILLIMETERS
DIM
MIN MAX
MIN MAX
???? 0.210
??? 5.33
A
0.015 ????
0.38 ???
A1
0.115 0.195
2.92 4.95
A2
0.014 0.022
0.35 0.56
b
0.060 TYP
1.52 TYP
b2
0.008 0.014
0.20 0.36
C
0.355 0.400
9.02 10.16
D
0.005 ????
0.13 ???
D1
0.300 0.325
7.62 8.26
E
0.240 0.280
6.10 7.11
E1
0.100 BSC
2.54 BSC
e
???? 0.430
??? 10.92
eB
0.115 0.150
2.92 3.81
L
???? 10 °
??? 10 °
M
SIDE VIEW
0.010
M
C A
M
B
M
NOTE 6
http://onsemi.com
11
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