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参数资料
| 型号： | MC33152VDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 9/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER DUAL HS 8-SOIC |
| 标准包装： | 1 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 55ns |
| 电流 - 峰： | 1.5A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 6.1 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | MC33152VDR2GOSCT |
MC34152, MC33152, NCV33152
I B
+
V in
V in
0
R g(off)
R g(on)
-
Base
Charge
Removal
C 1
In noise sensitive applications, both conducted and radiated EMI can
be reduced significantly by controlling the MOSFET's turn-on and
turn-off times.
Figure 22. Controlled MOSFET Drive
V CC = 15V
The totem-pole outputs can furnish negative base current for
enhanced transistor turn-off, with the addition of capacitor C 1 .
Figure 23. Bipolar Transistor Drive
47
+
+
0.1
6
+
-
5.7V
2
7
6.8
10
+
1N5819
+ V O ≈ 2 .0V CC
+
47
V CC
2N3904
10k
4
5
6.8
10
+
1N5819
- V O ≈ -V CC
100k
330
pF
47
+
3
Output Load Regulation
The capacitor's equivalent series resistance limits the Drive Output Current to 1.5 A. An
additional series resistor may be required when using tantalum or other low ESR capacitors.
Figure 24. Dual Charge Pump Converter
I O (mA)
0
1.0
10
20
30
50
+V O (V)
27.7
27.4
26.4
25.5
24.6
22.6
? V O (V)
? 13.3
? 12.9
? 11.9
? 11.2
? 10.5
? 9.4
http://onsemi.com
9
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