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参数资料
型号： MC33288
厂商： 飞思卡尔半导体(中国)有限公司
英文描述： Solid State Relay for Automotive Flasher Applications(固态继电器,适用于自动闪光器)
中文描述： 固态继电器（固态继电器，适用于自动闪光器闪光器的汽车应用）
文件页数： 4/8页
文件大小： 382K
代理商： MC33288
MC33288
Solid State Relay for Automotive Flasher Applications
Go to: www.freescale.com
4
MAXIMUM RATINGS
NOTES :
1. EDS1 testing is performed in accordance with the Human Body Model (Czap = 100pF, Rzap = 1500
)
2. EDS2 testing is performed in accordance with the Machine Model (Czap = 100pF, Rzap = 0
)
3. During lamp inrush current.
4. Device mounted on dual side printed circuit board with 70
μ
m copper thickness and 10cm
2
copper heat sink (2.5 cm
2
on top side and 7.5 cm
2
on down side).
5. Assuming a 150
°
C maximum junction temperature.
ELECTRICAL CHARACTERISTICS
(Vbat from 9 to 16V and junction temperature Tj from -40
°
to 150
°
C, unless otherwise noted
)
Ratings
Symbol
Value
Unit
ELECTRICAL RATINGS
Vbat Voltage with Respect to Gnd : Continuous/Pulse
Vbat
-14 to + 40
V
Out-1 & Out-2 Voltage with Respect of Gnd : Continuous/Pulse
Vout
-0.3 to 40
V
Out-1 to Vbat & Out-2 to Vbat voltage : Continuous/Pulse
Vout
40
V
IN-1, IN-2, St DC Voltage : Continuous/Pulse
Vin
-0.3 to 7
V
Cur R Voltage : Continuous/Pulse
Vcr
-0.3 to 7
V
ESD all Pins
Human Body Model (note1)
Machine Model (note2)
V
esd1
V
esd2
+/-2000
+/-200
V
V
Out-1, Out-2 Output Current : Pulse (note 3)
Ioutp
40
Amp
IN-1, IN-2, St
Iin
+/-5
mA
THERMAL RATINGS
Junction Temperature
Tj
- 40 to 150
°
C
Storage Temperature Range
Tst
- 65 to +150
°
C
Thermal Resistance Junction to Case
Rthjc
2
°
C/W
Thermal Resistance Junction to Ambient (note 4)
Rthja
25
°
C/W
Power Dissipation at Tcase 140
°
C (note 5)
Pd
5
W
Description
Symbol
Characteristics
Unit
Conditions
min.
typ.
max.
Nominal Operating Voltage
V
bat
9
16
V
Functional Operating Voltage
V
bat
8
35
V
Under Voltage Threshold
V
uv
6
7
8
V
Vbat Standby Supply Current
I
stdby
1
10
μ
A
V
bat
<14V & V
in
= 0V,T
j
<125
°
C
Supply Current in On State
I
on
8
20
mA
IN-1 & IN-2 @3.5V, no fault,
Vbat<14V,T
j
<125
°
C
Drain to Source on Resistance
R
dson
20
25
m
Iout =4A, V
bat
> 9V & T
j
= 25
°
C
Drain to Source on Resistance
R
dson
30
40
m
Iout = 4A, V
bat
> 9 & T
j
= 150
°
C
High Current Limitation
I
lim
30
A
Vout > 1V
Short Circuit limitation
I
lim
4
A
Vout < 1V, Tj=25
°
C
Hot Openload Threshold
I
ol
1
A
Vbat to Output Breakdown Voltage
V
dss
40
V
In-1 and In-2 @ 0V, Vout = 0,
Iout -0.25mA
Vbat to Out-1 : Leakage Current
I
out-leak
10
μ
A
Vin-1 =0V, Vbat =35V, Vout-1=0V
Freescale Semiconductor, Inc.
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