参数资料
型号: MC34151DR2G
厂商: ON Semiconductor
文件页数: 5/12页
文件大小: 0K
描述: IC MOSFET DRIVER DUAL HS 8-SOIC
标准包装: 1
配置: 低端
输入类型: 反相
延迟时间: 35ns
电流 - 峰: 1.5A
配置数: 2
输出数: 2
电源电压: 6.5 V ~ 18 V
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 标准包装
其它名称: MC34151DR2GOSDKR
MC34151, MC33151
3.0
High State Clamp
90%
Logic Input
V CC = 12 V
V in = 5 V to 0 V
C L = 1.0 nF
T A = 25 ° C
2.0
1.0
(Drive Output Driven Above V CC )
V CC = 12 V
80 m s Pulsed Load
120 Hz Rate
T A = 25 ° C
V CC
0
10%
Drive Output
0
GND
Low State Clamp
(Drive Output Driven Below Ground)
-1.0
0
0.2
0.4 0.6 0.8 1.0
1.2
1.4
50 ns/DIV
Figure 8. Propagation Delay
I O , OUTPUT LOAD CURRENT (A)
Figure 9. Drive Output Clamp Voltage
versus Clamp Current
0
-1.0
-2.0
V CC
Source Saturation V CC = 12 V
(Load to Ground) 80 m s Pulsed Load
120 Hz Rate
T A = 25 ° C
0
-0.5
-0.7
-0.9
-1.1
Source Saturation
(Load to Ground)
V CC
I source = 10 mA
I source = 400 mA
V CC = 12 V
-3.0
3.0
2.0
1.9
1.7
1.5
1.0
I sink = 400 mA
I sink = 10 mA
GND
(Load to V CC )
1.0
0
0
0.2
Sink Saturation
(Load to V CC )
0.4 0.6 0.8 1.0
1.2
1.4
0.8
Sink Saturation GN D
0.6
0
-55 -25 0 25 50 75
100
125
I O , OUTPUT LOAD CURRENT (A)
Figure 10. Drive Output Saturation Voltage
versus Load Current
T A , AMBIENT TEMPERATURE ( ° C)
Figure 11. Drive Output Saturation Voltage
versus Temperature
90%
90%
V CC = 12 V
V in = 5 V to 0 V
C L = 1.0 nF
T A = 25 ° C
V CC = 12 V
V in = 5 V to 0 V
10%
C L = 1.0 nF
T A = 25 ° C
10 ns/DIV
Figure 12. Drive Output Rise Time
10%
http://onsemi.com
5
10 ns/DIV
Figure 13. Drive Output Fall Time
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