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| 型号： | MC34151DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER DUAL HS 8-SOIC |
| 标准包装： | 1 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 35ns |
| 电流 - 峰： | 1.5A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 6.5 V ~ 18 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | MC34151DR2GOSDKR |
MC34151, MC33151
the NPN pullup during the negative output transient, power
dissipation at high frequencies can become excessive.
Figures 20, 21, and 22 show a method of using external
Schottky diode clamps to reduce driver power dissipation.
Undervoltage Lockout
An undervoltage lockout with hysteresis prevents erratic
system operation at low supply voltages. The UVLO forces
the Drive Outputs into a low state as V CC rises from 1.4 V
to the 5.8 V upper threshold. The lower UVLO threshold is
5.3 V, yielding about 500 mV of hysteresis.
gate charge information on their data sheets. Figure 18
shows a curve of gate voltage versus gate charge for the ON
Semiconductor MTM15N50. Note that there are three
distinct slopes to the curve representing different input
capacitance values. To completely switch the MOSFET
‘on’, the gate must be brought to 10 V with respect to the
source. The graph shows that a gate charge Q g of 110 nC is
required when operating the MOSFET with a drain to source
voltage V DS of 400 V.
16
Power Dissipation
Circuit performance and long term reliability are
enhanced with reduced die temperature. Die temperature
increase is directly related to the power that the integrated
12
MTM15N50
I D = 15 A
T A = 25 ° C
V DS = 100 V
V DS = 400 V
circuit must dissipate and the total thermal resistance from
the junction to ambient. The formula for calculating the
8.0
8.9 nF
junction temperature with the package in free air is:
T J = T A + P D (R q JA )
where: T J = Junction Temperature
T A = Ambient Temperature
P D = Power Dissipation
R q JA = Thermal Resistance Junction to Ambient
4.0
0
0
2.0 nF
40
80
Q g , GATE CHARGE (nC)
C GS =
120
D Q g
D V GS
160
There are three basic components that make up total
power to be dissipated when driving a capacitive load with
respect to ground. They are:
P D = P Q + P C + P T
where: P Q = Quiescent Power Dissipation
P C = Capacitive Load Power Dissipation
P T = Transition Power Dissipation
The quiescent power supply current depends on the
supply voltage and duty cycle as shown in Figure 17. The
device’s quiescent power dissipation is:
P Q = V CC I CCL (1 ? D) + I CCH (D)
Figure 18. Gate ? To ? Source Voltage
versus Gate Charge
The capacitive load power dissipation is directly related to
the required gate charge, and operating frequency. The
capacitive load power dissipation per driver is:
P C(MOSFET) = V C Q g f
The flat region from 10 nC to 55 nC is caused by the
drain ? to ? gate Miller capacitance, occurring while the
MOSFET is in the linear region dissipating substantial
amounts of power. The high output current capability of the
where:
I CCL = Supply Current with Low State Drive
Outputs
I CCH = Supply Current with High State Drive
Outputs
D = Output Duty Cycle
MC34151 is able to quickly deliver the required gate charge
for fast power efficient MOSFET switching. By operating
the MC34151 at a higher V CC , additional charge can be
provided to bring the gate above 10 V. This will reduce the
‘on’ resistance of the MOSFET at the expense of higher
driver dissipation at a given operating frequency.
The capacitive load power dissipation is directly related
to the load capacitance value, frequency, and Drive Output
voltage swing. The capacitive load power dissipation per
driver is:
The transition power dissipation is due to extremely short
simultaneous conduction of internal circuit nodes when the
Drive Outputs change state. The transition power
dissipation per driver is approximately:
where:
P C =
V OH =
V OL =
C L =
f=
V CC (V OH ? V OL ) C L f
High State Drive Output Voltage
Low State Drive Output Voltage
Load Capacitance
frequency
P T = V CC (1.08 V CC C L f ? 8 y 10 ? 4 )
P T must be greater than zero.
Switching time characterization of the MC34151 is
performed with fixed capacitive loads. Figure 14 shows that
for small capacitance loads, the switching speed is limited
When driving a MOSFET, the calculation of capacitive
load power P C is somewhat complicated by the changing
gate to source capacitance C GS as the device switches. To aid
in this calculation, power MOSFET manufacturers provide
by transistor turn ? on/off time and the slew rate of the
internal nodes. For large capacitance loads, the switching
speed is limited by the maximum output current capability
of the integrated circuit.
http://onsemi.com
7
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MC34151DR2G-CUT TAPE | 制造商:ON 功能描述:MC Series 1.5 A 20 V 100 kOhm SMT High Speed Dual MOSFET Driver - SOIC-8 |
| MC34151P | 功能描述:功率驱动器IC 1.5A High Speed Dual RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MC34151PG | 功能描述:功率驱动器IC 1.5A High Speed Dual Inverting MOSFET RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MC34152 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:AC-DC Offline Switching Controllers/Regulators |
| MC34152D | 功能描述:功率驱动器IC 1.5A High Speed Dual RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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