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参数资料
| 型号： | MC34164SN-5T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | IC SENSOR UNDERVOLTAGE 5V 5TSOP |
| 标准包装： | 1 |
| 类型： | 简单复位/加电复位 |
| 监视电压数目： | 1 |
| 输出： | 开路漏极或开路集电极 |
| 复位： | 低有效 |
| 电压 - 阀值： | 4.33V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSOP（0.059"，1.50mm 宽）5 引线 |
| 供应商设备封装： | 5-TSOP |
| 包装： | 剪切带 (CT) |
| 其它名称： | MC34164SN-5T1GOSCT |
MC34164, MC33164, NCV33164
MAXIMUM RATINGS
Rating
Power Input Supply Voltage
Reset Output Voltage
Reset Output Sink Current
Clamp Diode Forward Current, Reset to Input Pin (Note 1)
Symbol
V in
V O
I Sink
IF
Value
? 1.0 to 12
? 1.0 to 12
Internally
Limited
100
Unit
V
V
mA
mA
Power Dissipation and Thermal Characteristics
P Suffix, Plastic Package
Maximum Power Dissipation @ T A = 25 ° C
Thermal Resistance, Junction ? to ? Air
D Suffix, Plastic Package
Maximum Power Dissipation @ T A = 25 ° C
Thermal Resistance, Junction ? to ? Air
DM Suffix, Plastic Package
Maximum Power Dissipation @ T A = 25 ° C
Thermal Resistance, Junction ? to ? Air
Operating Junction Temperature
Operating Ambient Temperature Range
MC34164 Series
MC33164 Series, NCV33164
Storage Temperature Range
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
P D
R q JA
P D
R q JA
P D
R q JA
T J
T A
T stg
ESD
700
178
700
178
520
240
+150
0 to +70
? 40 to +125
? 65 to +150
4000
200
mW
° C/W
mW
° C/W
mW
° C/W
° C
° C
° C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
MC34164 ? 3, MC33164 ? 3 SERIES, NCV33164 ? 3
ELECTRICAL CHARACTERISTICS (For typical values T A = 25 ° C, for min/max values T A is the operating ambient temperature
range that applies [Notes 2 & 3], unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
COMPARATOR
Threshold Voltage
High State Output (V in Increasing)
Low State Output (V in Decreasing)
Hysteresis (I Sink = 100 m A)
V IH
V IL
V H
2.55
2.55
0.03
2.71
2.65
0.06
2.80
2.80
?
V
RESET OUTPUT
Output Sink Saturation
(V in = 2.4 V, I Sink = 1.0 mA)
(V in = 1.0 V, I Sink = 0.25 mA)
Output Sink Current (V in , Reset = 2.4 V)
Output Off ? State Leakage
(V in , Reset = 3.0 V)
(V in , Reset = 10 V)
Clamp Diode Forward Voltage, Reset to Input Pin (I F = 5.0 mA)
V OL
I Sink
I R(leak)
V F
?
?
6.0
?
?
0.6
0.14
0.1
12
0.02
0.02
0.9
0.4
0.3
30
0.5
1.0
1.2
V
mA
m A
V
TOTAL DEVICE
Operating Input Voltage Range
Quiescent Input Current
V in = 3.0 V
V in = 6.0 V
V in
I in
1.0 to 10
?
?
?
9.0
24
?
15
40
V
m A
1. Maximum package power dissipation limits must be observed.
2. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
3. T low = 0 ° C for MC34164 T high = +70 ° C for MC34164
= ? 40 ° C for MC33164, NCV33164 = +125 ° C for MC33164, NCV33164
http://onsemi.com
2
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