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参数资料
| 型号： | MC34164SN-5T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/12页 |
| 文件大小： | 0K |
| 描述： | IC SENSOR UNDERVOLTAGE 5V 5TSOP |
| 标准包装： | 1 |
| 类型： | 简单复位/加电复位 |
| 监视电压数目： | 1 |
| 输出： | 开路漏极或开路集电极 |
| 复位： | 低有效 |
| 电压 - 阀值： | 4.33V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSOP（0.059"，1.50mm 宽）5 引线 |
| 供应商设备封装： | 5-TSOP |
| 包装： | 剪切带 (CT) |
| 其它名称： | MC34164SN-5T1GOSCT |
MC34164, MC33164, NCV33164
Power
Supply
I in
R H
V in
R L
Reset
Microprocessor
Circuit
V H
(mV)
60
103
Test Data
D V th R H
(mV) ( W )
0 0
1.0 100
R L
(k W )
43
10
123
160
155
1.0
1.0
2.2
100
100
220
6.8
4.3
10
1.2 V ref
V H ≈
4.3 R H
R L
+ 0.06
199
280
262
2.2
2.2
4.7
220
220
470
6.8
4.3
10
MC3X164-5
GND
D V th(lower) ≈ 10 R H x 10 - 6
where: R H ≤ 1.0 k W
43 k W ≥ R L ≥ 4.3 k W
306
357
421
530
4.7
4.7
4.7
4.7
470
470
470
470
8.2
6.8
5.6
4.3
Comparator hysteresis can be increased with the addition of resistor R H . The hysteresis equation has been simplified and does not account for the change of input current
I in as V in crosses the comparator threshold (Figure 8). An increase of the lower threshold D V th(lower) will be observed due to I in which is typically 10 m A at 4.3 V. The
equations are accurate to ± 10% with R H less than 1.0 k W and R L between 4.3 k W and 43 k W .
Figure 15. Low Voltage Microprocessor Reset With Additional Hysteresis
(MC3X164 ? 5 Shown)
Power
Supply
Input
1.0 k
Input
Reset
Reset
Solar
Cells
1.2 V ref
1.2 V ref
GND
GND
Figure 16. Voltage Monitor
Figure 17. Solar Powered Battery Charger
V CC
R L
4.3V
270
MTP3055EL
Input
Reset
Overheating of the logic level power MOSFET due to insufficient
gate voltage can be prevented with the above circuit. When the
input signal is below the 4.3 V threshold of the MC3X164-5, its
1.2 V ref
output grounds the gate of the L 2 MOSFET.
GND MC3X164-5
Figure 18. MOSFET Low Voltage Gate Drive Protection Using the MC3X164 ? 5
http://onsemi.com
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