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参数资料
| 型号： | MC34845EPR2 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 5/24页 |
| 文件大小： | 0K |
| 描述： | IC DVR LED BACKLIGHT 6CH 24-QFN |
| 标准包装： | 2,500 |
| 拓扑： | PWM，升压（升压） |
| 输出数： | 6 |
| 内部驱动器： | 是 |
| 类型 - 主要： | 背光 |
| 频率： | 600kHz |
| 电源电压： | 5 V ~ 21 V |
| 输出电压： | 8 V ~ 60 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 24-UFQFN 裸露焊盘 |
| 供应商设备封装： | 24-QFN 裸露焊盘（4x4） |
| 包装： | 带卷 (TR) |
| 工作温度： | -40°C ~ 85°C |
ELECTRICAL CHARACTERISTICS
STATIC AND DYNAMIC ELECTRICAL CHARACTERISTICS
STATIC AND DYNAMIC ELECTRICAL CHARACTERISTICS
Table 3. Static and Dynamic Electrical Characteristics
Characteristics noted under conditions V IN = 12 V, V OUT = 35 V, I LED = 30 mA, f S = 600 kHz, f PWM = 600 Hz - 40 ° C ≤ T A ≤
85 ° C, unless otherwise noted. Typical values noted reflect the approximate parameter means at T A = 25°C under nominal
conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
SUPPLY
Supply Voltage
V IN
5.0
10
21
V
Supply Current when in Shutdown Mode
I SHUTDOWN
μ A
EN = Low, PWM = Low
Supply Current when Operational Mode
I OPERATIONAL
-
2.0
10
mA
Boost = Pulse Skipping, Channels = 1% of Duty Cycle
EN = High, PWM = Low
Under-voltage Lockout
V IN Rising
Under-voltage Hysteresis
V IN Falling
VDC1 Voltage (6)
C VDC1 = 2.2 μ F
VDC2 Voltage (6) (V IN between 7.0 and 21 V)
C VD2C = 2.2 μ F
UVLO
UVLO HYST
V DC1
V DC2
-
4.0
-
2.4
5.7
5.0
-
0.25
2.5
6.0
6.5
4.4
-
2.6
6.3
V
V
V
V
BOOST
Output Voltage Range (7)
VIN = 5.0 V
VIN = 21 V
V OUT1
V OUT2
8.0
24
-
-
43
60
V
Boost Switch Current Limit
I BOOST_LIMIT
A
34845, 34845A, 34845C
34845B, 34845D
1.9
2.1
2.1
2.35
2.3
2.6
Boost Switch Current Limit Timeout
t BOOST_TIME
-
10
-
ms
RDSON of Internal FET
R DSON
m Ω
I DRAIN = 1.0 A
Boost Switch Off state Leakage Current
V SWA,SWB = 60 V
Feedback pin Off-state Leakage Current
V OUT = 60 V
Peak Boost Efficiency (8)
V OUT = 33 V, RL = 330 Ω
I BOOST_LEAK
VOUT LEAK
EFF BOOST
-
-
-
-
300
-
-
90
520
1.0
500
-
μ A
μ A
%
Notes
6. This output is for internal use only and not to be used for other purposes
7. Minimum and maximum output voltages are dependent on Min/Max duty cycle condition.
8. Boost efficiency test is performed under the following conditions: f SW = 600 kHz, V IN = 12 V, V OUT = 33 V and R L = 330 Ω . The following
external components are used: L = 10 μ H DCR = 0.1 Ω , C OUT = 3x1 μ F (ceramic), Schottky diode V F = 0.35 V.
34845
Analog Integrated Circuit Device Data
Freescale Semiconductor
5
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